| PART |
Description |
Maker |
| STT358512 |
3.5A, 20V, RDS(ON) 75m -2.5A, -20V, RDS(ON) 160m N And P-Channel Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| SSG4520H12 |
N-Ch: 6.6A, 20V, RDS(ON) 47 m P-Ch: -5.2A, -20V, RDS(ON) 79 mN & P-Ch Enhancement Mode Power MOSFET
|
SeCoS Halbleitertechnologie GmbH
|
| AM29DL400T-80EE AM29DL400T-80EI AM29DL400T-80FC AM |
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7306 with Standard Packaging
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7306 with Lead Free Packaging
-20V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7104 with Lead Free Packaging
-30V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7328 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7303 with Standard Packaging
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7380QPBF with Standard Packaging
30V N-Channel PowerTrench MOSFET
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF9910 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Industrial version of our popular IRF7103PBF - standard packaging
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7341 with Lead Free Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7101 with Lead Free Packaging
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7322D1TR with Lead Free Packaging on Tape and Reel
-20V FETKY - MOSFET and Schottky Diode in a SO-8 package; Similar to IRF7422D2 with Lead Free Packaging
30V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF9956 with Lead Free Packaging
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7380 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7301 with Standard Packaging
20V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7331 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7103 with Standard Packaging
50V Dual N-Channel HEXFET Power MOSFET in a SO-8 package - Q101 Qualified; Similar to IRF7103Q with Lead-Free Packaging
-20V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package; A IRF7750 with Standard Packaging
20V FETKY - MOSFET and Schottky Diode in a Micro 8 package; A IRF7521D1 with Standard Packaging
55V Dual N-Channel HEXFET Power MOSFET in a SO-8 package designed and qualified for the industrial market; Industrial version of our popular IRF7341PBF - standard packaging EEPROM
EEPROM EEPROM
80V Dual N-Channel HEXFET Power MOSFET in a SO-8 package; Similar to IRF7380 with Lead Free Packaging
-12V Dual P-Channel HEXFET Power MOSFET in a SO-8 package; A IRF7329 with Standard Packaging
|
Air Cost Control
Advanced Micro Devices, Inc.
|
| STB160NF02L 7459 |
N-CHANNEL 20V - 0.0018ohm - 160A D2PAK STripFET POWER MOSFET
N-CHANNEL 20V - 0.0018ohm - 160A D2PAK STripFET?/a> POWER MOSFET
N-CHANNEL 20V - 0.0018 OHM - 160A D2PAK STRIPFET POWER MOSFET
From old datasheet system
N-CHANNEL 20V - 0.0018ohm - 160A D2PAK STripFET⑩ POWER MOSFET
N-CHANNEL 20V - 0.0018 OHM - 160A D2PAK STRIPFET POWER MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| CSB1436R CSB1436P CSB1436 |
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 390 hFE.
TRANSISTOR | BJT | PNP | 20V V(BR)CEO | 5A I(C) | TO-126 晶体管|晶体管|进步党| 20V的五（巴西）总裁| 5A条一（c）|26
1.500W Medium Power PNP Plastic Leaded Transistor. 20V Vceo, 5.000A Ic, 82 - 180 hFE.
|
Electronic Theatre Controls, Inc.
Continental Device India Limited
|
| IRFU3706 IRFR3706 IRFR3706PBF IRFR3706TR IRFR3706T |
20V Single N-Channel HEXFET Power MOSFET in a D-Pak package
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?)
Power MOSFET(Vdss=20V Rds(on)max=9.0mohm Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A)
Power MOSFET(Vdss=20V, Rds(on)max=9.0mohm, Id=75A?
20V Single N-Channel HEXFET Power MOSFET in a I-Pak package
|
IRF[International Rectifier]
|
| NTHD3101F NTHD3101FT1 NTHD3101FT1G NTHD3101FT3 NTH |
Power MOSFET and Schottky Diode(20V, 4.4A???MOSFET)
Power MOSFET and Schottky Diode(20V, 4.4A功率MOSFET) 功率MOSFET和肖特基二极管（20V的，4.4A功率MOSFET的）
|
ON Semiconductor
|
| IRL3714Z IRL3714ZL IRL3714ZS |
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
IR
|
| IRF3711LPBF IRF3711S IRF3711STRR IRF3711SPBF IRF37 |
20V Single N-Channel HEXFET Power MOSFET in a TO-262 package
20V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
20V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| ITF87056DQT |
5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET 5A0V的，0.045欧姆，双P沟道.5V的指定功率MOSFET
5A/ 20V/ 0.045 Ohm/ Dual P-Channel/ 2.5V Specified Power MOSFET
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
