| PART |
Description |
Maker |
| TS3005ITD1033TP |
A 1.55V to 5.25V, 1.35uA, 1.7ms to 33hrs Silicon Timer
|
Touchstone Semiconductor Inc
|
| TS3006DB |
A 1.55V to 5.25V, 1.9A, 9kHz to 300kHz Silicon Timer
|
Touchstone Semiconducto...
|
| IRFL014N |
55V,1.9A, N-Channel HEXFET Power MOSFET(55V,1.9A,N沟道 HEXFET 功率MOS场效应管) 55V的，1.9AN沟道HEXFET功率MOSFET5V的，1.9A沟道的HEXFET功率马鞍山场效应管）
Power MOSFET(Vdss=55V, Rds(on)=0.16ohm, Id=1.9A)
Power MOSFET(Vdss=55V Rds(on)=0.16ohm Id=1.9A)
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| HUF75344S3S HUF75344P3 HUF75344G3 FN4402 |
75A, 55V, 0.008 Ohm, N-Channel UltraFET Power MOSFETs(75A, 55V, 0.008 Ω,N沟道,UltraFET功率MOS场效应管)
From old datasheet system
|
INTERSIL[Intersil Corporation]
|
| IRF9Z24N IRF9Z24NPBF |
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)
|
IRF[International Rectifier]
|
| IRF9Z34N IRF9Z34NPBF |
Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| IRF1010N IRF1010NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=55V/ Rds(on)=11mohm/ Id=85A)
Power MOSFET(Vdss=55V, Rds(on)=11mohm, Id=85A?
|
International Rectifier
|
| HUFA75332S3S HUFA75332G3 HUFA75332P3 HUFA75332S3ST |
66A/ 55V/ 0.016 Ohm. N-Channel UltraFET Power MOSFETs
Discrete Automotive N-Channel UltraFET Power MOSFET, 55V, 60A, 0.019 Ohm @ Vgs = 10V, T0263/D2PAK Package
60A, 55V, 0.019 Ohm, N-Channel UltraFET Power MOSFETs
|
FAIRCHILD[Fairchild Semiconductor]
|
| IRFI1010N IRFI1010 |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=55V, Rds(on)=0.012ohm, Id=49A)
Power MOSFET(Vdss=55V Rds(on)=0.012ohm Id=49A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=55V/ Rds(on)=0.012ohm/ Id=49A)
|
IRF[International Rectifier]
|
| IRFIZ34N IRFIZ34NPBF |
55V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Lsolated Base Power HEX-pak Assembly Half Bridge Configuration
Power MOSFET(Vdss=55V, Rds(on)=0.04ohm, Id=21A)
|
IRF[International Rectifier]
|
| IRF5NJ5305 IRF5NJ5305SCX |
HEXFET POWER MOSFET SURFACE MOUNT (SMD-0.5)
22 A, 55 V, 0.065 ohm, P-CHANNEL, Si, POWER, MOSFET
POWER MOSFET P-CHANNEL(Vdss=-55V/ Rds(on)=0.065ohm/ Id=-22A*)
SURFACE MOUNT (SMD-0.5) 55V, P-CHANNEL
POWER MOSFET P-CHANNEL(Vdss=-55V, Rds(on)=0.065ohm, Id=-22A*)
-55V Single P-Channel Hi-Rel MOSFET in a SMD-0.5 package
|
IRF[International Rectifier]
|
| IRFR2905ZPBF IRFU2905ZPBF |
HEXFET? Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mΩ , ID = 42A )
HEXFET垄莽 Power MOSFET ( VDSS = 55V , RDS(on) = 14.5m楼? , ID = 42A )
HEXFET㈢ Power MOSFET ( VDSS = 55V , RDS(on) = 14.5mヘ , ID = 42A )
|
International Rectifier
|
