| PART |
Description |
Maker |
| M63834FP |
(M63834xP) 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
|
Mitsubishi Electric
|
| M63820FP |
(M63820xP) 8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY
|
Mitsubishi Electric
|
| M63820FP M63820KP |
8-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M63828DP |
7-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
|
| M54587P M54587 M54587FP |
8-UNIT 500mA DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M54563P12 M54563FP |
8-UNIT 500mA SOURCE TYPE DARLINGTON TRANSISTOR ARRAY WITH CLAMP DIODE
0.35 A 8 CHANNEL, BUF OR INV BASED PRPHL DRVR, PDSO20
|
Mitsubishi Electric Semiconductor
|
| M63823FP M63823GP M63823P M63823P/FP/GP |
Transistor Array
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Semiconductor
Mitsubishi Electric Corporation
|
| M63826FP M63826GP M63826P M63826P/FP/GP |
Transistor Array
7-UNIT 500mA DARLINGTON TRANSISTOR-ARRAY WITH CLAMP DIODE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
| GMPSA13 |
The GMPSA13 is designed for darlington applications requiring extremely high current gain at collector to 500mA
NPN SILICON DARLINGTON TRANSISTOR
|
E-Tech Electronics LTD
GTM CORPORATION
|
| IR2C36 |
7-Unit 500mA Transistor Array
|
Sharp
|
| 2N999 ST640 ST646 FT359 |
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 500MA I(C) | CAN
TRANSISTOR | BJT | DARLINGTON | NPN | 60V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | DARLINGTON | PNP | 80V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|达林顿|进步党| 80V的五（巴西）总裁| 10A条一（c）|3
TRANSISTOR | BJT | DARLINGTON | NPN | 350V V(BR)CEO | 15A I(C) | TO-3
|
STMicroelectronics N.V.
|
| IR2410 |
7-Unit 400mA Darlington Transistor Array
|
Sharp
|
