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2MBI100J120 - TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c

2MBI100J120_6085193.PDF Datasheet

 
Part No. 2MBI100J120
Description TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c

File Size 176.91K  /  4 Page  

Maker

Samsung Semiconductor Co., Ltd.



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(CHINA HK & SZ)
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Part: 2MBI100-060
Maker: N/A
Pack: N/A
Stock: 134
Unit price for :
    50: $36.18
  100: $34.38
1000: $32.57

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 Full text search : TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c
 Product Description search : TRANSISTOR | IGBT POWER MODULE | HALF BRIDGE | 1.2KV V(BR)CES | 100A I(C) 晶体管| IGBT功率模块|半桥| 1.2KV五(巴西)国际消费电子展| 100号A一c


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