| PART |
Description |
Maker |
| SIDC04D60F6 SIDC04D60F610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip soft , fast switching
|
Infineon Technologies AG
|
| FDMA1032CZ FDMA1032CZ08 |
20V Complementary PowerTrench? MOSFE
20V Complementary PowerTrench㈢ MOSFE
|
Fairchild Semiconductor
|
| RGP30J-B RGPB30J |
Fast Recovery Pack: G3
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:600V CURRENT: 3.0A
|
Gulf Semiconductor
|
| BYV95CGP BYV95AGP BYV95BGP |
Fast Recovery Pack: DO-15
SINTERED GLASS JUNCTION FAST SWITCHING PLASTIC RECTIFIER VOLTAGE:200 TO 600V CURRENT: 1.5A
|
Gulf Semiconductor
|
| UI02N60 |
N-Ch 600V Fast Switching MOSFETs
|
Unitpower Technology Limited
|
| SIDC07D60AF6 SIDC07D60AF610 |
Fast switching diode 600V Emitter Controlled technology 70 μm chip
|
Infineon Technologies AG
|
| STGW30NC60W |
N-CHANNEL 30A - 600V - TO-247 Ultra FAST Switching PowerMESH IGBT
|
STMicroelectronics
|
| ES2A ES2B ES2C ES2D ES2G ES2J |
Super Fast Recovery Pack: SMB
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE拢潞50 TO 600V CURRENT拢潞2.0A
SURFACE MOUNT FAST ULTRAFAST RECTIFIER VOLTAGE?0 TO 600V CURRENT?.0A
|
Gulf Semiconductor
|
| 10N70-Q |
N-CHANNEL POWER MOSFE
|
Unisonic Technologies
|
| CSFMT108-HF |
Halogen Free Super Fast Recovery Rectifiers, V-RRM=600V, V-DC=600V, I-(AV)=1A
|
Comchip Technology
|
| IRG4BC20MDS IRG4BC20MD-S IRG4BC20MD-STRR IRG4BC20M |
600V Fast 1-8 kHz Copack IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=600V, Vce(on)typ.=1.85V, @Vge=15V, Ic=11A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 11A I(C) | TO-263AB
|
IRF[International Rectifier]
|
| SGSD310 SGSD311 SGSD311FI |
150W; V(cer): 600V; V(ceo): 400V; 28A; high voltage, high power, fast switching silicon multiepitaxial planar NPN transistor
|
SGS Thomson Microelectronics
STMicroelectronics
|
