| PART |
Description |
Maker |
| 2SJ358 2SJ358-T1 2SJ358-T2 2SJ358-AZ TC-2491 |
From old datasheet system
P-channel MOS FET (-60V, -3A)
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCH
3 A, 60 V, 0.4 ohm, P-CHANNEL, Si, POWER, MOSFET
|
NEC[NEC]
|
| 2SK2038 K2038 |
2SK2038
N CHANNEL MOS TYPE (HIGH SPEED/ HIGH CURRENT SWITCHING APPLICATIONS)
TRANSISTOR,MOSFET,N-CHANNEL,800V V(BR)DSS,5A I(D),TO-247VAR
From old datasheet system
N CHANNEL MOS TYPE (HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS) N通道马鞍山型（高速，高电流开关应用）
|
Toshiba.
TOSHIBA[Toshiba Semiconductor]
Toshiba, Corp.
|
| HAT1024R-EL-E HAT1024R-15 |
3.5 A, 30 V, 0.34 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| HAT1025R-EL-E HAT1025R-15 |
4.5 A, 20 V, 0.15 ohm, 2 CHANNEL, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| HAT2215R-EL-E HAT2215R-15 |
3.4 A, 80 V, 0.145 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel Power MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK0222DNS-00-J5 |
Silicon N Channel Power MOS FET with Schottky Barrier Diode High Speed Power Switching
14 A, 25 V, 0.0137 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, HWSON3046-8, 9 PIN
|
Renesas Electronics Corporation
|
| MP4410 |
Power MOS FET Module Silicon N Channel MOS Type (L2-pi-MOSV 4 in 1) High Power, High Speed Switching Applications. Hammer Drive, Pulse Motor Drive and Inductive Load Switching.
|
TOSHIBA
|
| 2SK3211 2SK3211L-E 2SK3211STL-E |
25 A, 200 V, 0.085 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK5013DPE-00-J3 RJK5013DPE |
14 A, 500 V, 0.465 ohm, N-CHANNEL, Si, POWER, MOSFET
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJK2006DPE-TL-E RJK2006DPF RJK2006DPJ |
Silicon N Channel MOS FET High Speed Power Switching
40 A, 200 V, 0.059 ohm, N-CHANNEL, Si, POWER, MOSFET LDPAK-3
|
Renesas Electronics Corporation
Glenair, Inc.
|
| 2SK2736 |
Silicon N Channel DVL MOS FET High Speed Power Switching
Silicon N Channel DV-L MOS FET High Speed Power Switching
|
HITACHI[Hitachi Semiconductor]
|
|
