| PART |
Description |
Maker |
| HMT451S6MMP8C-G7 HMT451S6MMP8C-S6 HMT451S6MMR8C-G7 |
204pin DDR3 SDRAM SODIMM
512M X 64 DDR DRAM MODULE, DMA204 LEAD FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
|
| HMT351S6AFR8C-G7 HMT351S6AFR8C-H9 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| HMT112S6TFR8C-G7 HMT112S6TFR8C-H9 HMT125S6TFR8C-G7 |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| HMT325S6CFR8C |
204pin DDR3 SDRAM SODIMM
|
Hynix Semiconductor
|
| HMT125S6AFP8C-G7 HMT125S6AFP8C-G8 HMT125S6AFP8C-H8 |
204pin DDR3 SDRAM SODIMMs
128M X 64 DDR DRAM MODULE, 20 ns, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
64M X 64 DDR DRAM MODULE, 20 ns, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
DDR DRAM MODULE, ZMA203 LEAD FREE. HALOGEN FREE, SODIMM-204
|
Hynix Semiconductor, Inc.
HYNIX SEMICONDUCTOR INC
|
| M464S6554BTS-CL7A M464S3354BTS M464S3354BTS-C7A M4 |
SDRAM Unbuffered SODIMM 内存缓冲SODIMM
SDRAM Unbuffered SODIMM 内存缓冲的SODIMM
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| M464S0924CT2 M464S1724CT2 |
8M x 64 SDRAM SODIMM based on 8M x 16, 4Banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Datasheet
16Mx64 SDRAM SODIMM based on 8Mx16,4Banks,4K Refresh,3.3V Synchronous DRAMs with SPD Serial Presence Detect
|
Samsung Electronic
|
| MT41J256M8 MT41J128M16 MT41J128M16HA-15EDTR MT41J1 |
DDR3 SDRAM MT41J512M4 64 Meg x 4 x 8 Banks MT41J256M8 32 Meg x 8 x 8 Banks MT41J128M16 16 Meg x 16 x 8 Banks
2Gb: x4, x8, x16 DDR3 SDRAM Features
DDR3 SDRAM MT41J512M4 ?64 Meg x 4 x 8 Banks MT41J256M8 ?32 Meg x 8 x 8 Banks MT41J128M16 ?16 Meg x 16 x 8 Banks
|
Micron Technology
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| M470L6423CK0 |
512MB DDR SDRAM MODULE (64Mx64 based on DDP 64Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity
|
SAMSUNG[Samsung semiconductor]
|
| KMM464S3323BN |
144pin SDRAM SODIMM
|
Samsung Semiconductor
|
