| PART |
Description |
Maker |
| MRF9180 MRF9180S |
MRF9180, MRF9180S 880 MHz, 170 W, 26 V Lateral N-Channel RF Power MOSFETs
880 MHz 170 W 26 V LATERAL N-CHANNEL RF POWER MOSFETs
880 MHz, 170 W, 26 V LATERAL N-CHANNEL RF POWER MOSFETs
|
MOTOROLA[Motorola Inc]
MOTOROLA[Motorola, Inc]
|
| MRF21180 |
MRF21180, MRF21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETs
|
Motorola
|
| MRF18085AL |
1805鈥?880 MHz, 85 W, 26 V GSM/GSM EDGE Lateral N鈥揅hannel RF Power MOSFETs
|
MOTOROLA
|
| XMAISO-10-T |
880 MHz - 915 MHz RF/MICROWAVE ISOLATOR
|
XMA CORP
|
| M5RJ18EPJ M5RJ18EPJ-R M5RJ18EQJ M5RJ18EQJ-R M5RJ65 |
CRYSTAL OSCILLATOR, CLOCK, 19.44 MHz - 170 MHz, PECL OUTPUT
CRYSTAL OSCILLATOR, CLOCK, 170 MHz - 250 MHz, PECL OUTPUT
9x14 mm, 3.3 Volt, LVPECL/LVDS, Clock Oscillator
|
MTRONPTI
|
| SFH485P Q62703-Q516 Q62703-Q2761 Q62703-Q2851 Q627 |
Super SIDELED High-Current LED 超SIDELED高电流LED
GaAIAs-IR-Lumineszenzdiode (880 nm)GaAIAs Infrared Emitter (880 nm)
From old datasheet system
|
SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
|
| MRF6S19100H MRF6S19100HR3 MRF6S19100HR306 MRF6S191 |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
MRF6S19100HSR3 1930-1990 MHz, 22 W Avg., 28 V, 2 x N-CDMA Lateral N-Channel RF Power MOSFETs
|
Freescale Semiconductor, Inc
MOTOROLA
|
| PE3X20TF-FREQ-OUT7 |
CRYSTAL OSCILLATOR, CLOCK, 170 MHz - 650 MHz, PECL OUTPUT
|
PLETRONICS INC
|
| ADPQ-ED10603/1 |
70 MHz - 170 MHz RF/MICROWAVE COMBINER, 0.25 dB INSERTION LOSS CASE X0, 6 PIN
|
Mini-Circuits
|
| SM1145JDS-FREQ-OUT21 SM1145JDV-FREQ-50-OUT21 |
CRYSTAL OSCILLATOR, CLOCK, 70 MHz - 170 MHz, CMOS OUTPUT
|
PLETRONICS INC
|
