| PART |
Description |
Maker |
| KX7N10L |
VDS (V) = 100V RDS(ON) 350m (VGS = 10V), ID=0.85A RDS(ON) 380m (VGS = 5V), ID=0.85A
|
TY Semiconductor Co., Ltd
|
| NTMFS4847NT3G |
Power MOSFET 30 V, 85A, Single N-Channel, SO-8 FL 100000 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
|
ON Semiconductor
|
| STB85NF3LLT4 STB85NF3LL06 STB85NF3LL_06 B85NF3LL S |
N-channel 30V - 0.006ohm - 85A - D2PAK Low gate charge STripFET TM II Power MOSFET
|
STMICROELECTRONICS[STMicroelectronics]
|
| 88HFR100M 88HFR120M 88HFR10M 88HFR140M 88HFR160M 8 |
STANDARD RECOVERY DIODES
Diode Switching 1.6KV 85A 2-Pin DO-5
Diode Switching 800V 85A 2-Pin DO-5
Diode Switching 600V 85A 2-Pin DO-5
STANDARD RECOVERY DIODES
|
New Jersey Semi-Conductor Products, Inc.
New Jersey Semiconductors
New Jersey Semi-Conduct...
|
| 85HFL40S |
Diode Switching 400V 85A 2-Pin DO-5
|
New Jersey Semiconductor
|
| FQP27P06 |
60V P-Channel MOSFET
Inductor; Inductor Type:Standard; Inductance:217uH; Series:CMS; DC Resistance Max:0.02ohm; Package/Case:PCB Surface Mount; Core Material:Ferrite; Current, It rms:2.85A; Leaded Process Compatible:Yes; Leakage Inductance:1.9uH RoHS Compliant: Yes
|
FAIRCHILD[Fairchild Semiconductor]
FAIRCHILD SEMICONDUCTOR CORP
|
| RA13H4047M RA13H4047M-01 RA13H4047M-E01 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V 2 Stage Amp. For MOBILE RADIO
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V, 2 Stage Amp. For MOBILE RADIO
MITSUBISHI RF MOSFET MODULE 400-470MHz 13W 12.5V/ 2 Stage Amp. For MOBILE RADIO
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| PF0027 |
MOS FET Power Amplifier Module
MOSFET Power Ampllfier Module for E-TACS Handy Phone
|
Renesas Technology
Hitachi Semiconductor
|
| AP131 AP131-50Y AP131-15W AP131-15Y AP131-16W AP13 |
1.5A Fast Ultra Low Dropout Linear Regulators 1.5A的快速超低压差线性稳压器
MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-55V; Continuous Drain Current, Id:75A; On-Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:-10V; Package/Case:TO-220; Leaded Process Compatible:No 300mA低压差线性稳压器，带有关
MOSFET, N D-PAK;; Transistor type:MOSFET; Transistor polarity:N Channel; Voltage, Vds max:30V; Case style:TO-252 (D-Pak); Current, Id cont:63A; Current, Idm pulse:50A; Power, Pd:65.2W; Resistance, Rds on:0.0095R;
LED Lamp; Color:Blue; Luminous Intensity (MSCP):210ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
LED Lamp; Color:Blue; Luminous Intensity (MSCP):15ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
LED Lamp; Color:Blue; Luminous Intensity (MSCP):50ucd; Voltage Rating:3.9V; LED Color:Blue; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Terminal Type:Radial Leaded
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:85A; On-Resistance, Rds(on):3mohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TO-220AB; Leaded Process Compatible:Yes
MOSFET, P TO-220MOSFET, P TO-220; Transistor type:MOSFET; Transistor polarity:P; Voltage, Vds max:30V; Case style:TO-220AB; Current, Id cont:70A; Current, Idm pulse:240A; Power, Pd:187W; Resistance, Rds on:0.007R; Pin
SENSOR, OPTICAL, PHOTOTRANSISTOR O/P; RoHS Compliant: Yes
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:20V; Continuous Drain Current, Id:85A; On-Resistance, Rds(on):0.003ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:TO-220; Leaded Process Compatible:No
Optical Sensor (Switch) Reflective; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:32V
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:70A; On-Resistance, Rds(on):14mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
LED Lamp; Color:Yellow; Luminous Intensity (MSCP):2.5; Viewing Angle:60; Forward Current:7mA; Forward Voltage:2.2V; LED Color:Yellow; Leaded Process Compatible:Yes; Lens Style:(L x W x D) 3 x 2.8 x 1.65 mm; Lens Width:3mm
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:150V; Continuous Drain Current, Id:85A; On-Resistance, Rds(on):21mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
Optical Sensor (Switch) Transmissive / Slotted Interrupter; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:70V
Optical Sensor (Switch) Reflective; Optocoupler Output Type:Transistor; Leaded Process Compatible:Yes; Voltage Rating:70V
LED Lamp; Color:Yellow; Luminous Intensity (MSCP):50; Viewing Angle:60; Voltage Rating:2V; Forward Current:30mA; Forward Voltage:2V; LED Color:Yellow; Leaded Process Compatible:Yes; Mounting Type:Surface Mount
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:75A; On-Resistance, Rds(on):8mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220; Leaded Process Compatible:No
LED Lamp; Color:Green; Luminous Intensity (MSCP):1.6; Viewing Angle:60; Forward Current:7mA; Forward Voltage:1.9V; LED Color:Green; Leaded Process Compatible:Yes; Lens Style:(L x W x D) 3 x 2.8 x 1.65 mm; Lens Width:3
MOSFET, N TO-220AB
300mA Low Dropout Linear Regulator with Shutdown
|
Diodes, Inc.
TE Connectivity, Ltd.
ANACHIP[Anachip Corp]
ETC[ETC]
|
| DE375-301N40-00 DE150-102N02-00 |
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 300V V(BR)DSS | 40A I(D) 晶体管| MOSFET功率模块|独立| 300V五（巴西）直| 40A条（丁）
TRANSISTOR | MOSFET POWER MODULE | INDEPENDENT | 1KV V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块|独立| 1KV交五（巴西）直|甲（丁）
|
EPCOS AG
Electronic Theatre Controls, Inc.
|
| APT40N60JCU3 |
40 A, 600 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET
ISOTOP Buck chopper Super Junction MOSFET Power Module
|
MICROSEMI POWER PRODUCTS GROUP
Advanced Power Technology
|
