| PART |
Description |
Maker |
| FCPF22N60NT FCP22N60N |
N-Channel MOSFET 600V, 22A, 0.165W
600V N-Channel MOSFET, SupreMOS™; 3-TO-220 22 A, 600 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IXTQ22N60P IXTV22N60PS |
MOSFET N-CH 600V 22A TO-3P 22 A, 600 V, 0.35 ohm, N-CHANNEL, Si, POWER, MOSFET
PolarHVTM Power MOSFET N-Channel Enhancement Mode
|
IXYS, Corp.
IXYS Corporation
|
| 22RIA40M 22RIA40MS90 22RIA140S9 22RIA40S90 22RIA40 |
800V 22A Phase Control SCR in a TO-208AA (TO-48) package
1600V 35A Phase Control SCR in a TO-208AA (TO-48) package
1400V 35A Phase Control SCR in a TO-208AA (TO-48) package
1200V 22A Phase Control SCR in a TO-208AA (TO-48) package
1000V 22A Phase Control SCR in a TO-208AA (TO-48) package
100V 22A Phase Control SCR in a TO-208AA (TO-48) package
600V 22A Phase Control SCR in a TO-208AA (TO-48) package
MEDIUMPOWERTHYRISTORS
400V 22A Phase Control SCR in a TO-208AA (TO-48) package
Circular Connector; MIL SPEC:MIL-C-5015 A/B/C; Body Material:Aluminum Alloy; Series:97-3106; No. of Contacts:4; Connector Shell Size:14S; Connecting Termination:Solder; Circular Shell Style:Straight Plug RoHS Compliant: Yes
MEDIUM POWER THYRISTORS 中功率晶闸管
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FCPF22N60NT |
N-Channel SupreMOSMOSFET 600V, 22A, 165m
|
Fairchild Semiconductor
|
| RJP60V0DPM |
600V - 22A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| STP22NF03L07 STP22NF03L |
N-channel 30V - 0.0038Ω - 22A - TO-220 STripFET II Power MOSFET
N-channel 30V - 0.0038ヘ - 22A - TO-220 STripFET⑩ II Power MOSFET
|
STMicroelectronics
|
| STB25NM50N-1 STF25NM50N STW25NM50N STP25NM50N STB2 |
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 500V - 0.11Ω - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
N-channel 500V - 0.11楼? - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh垄芒 Power MOSFET
N-channel 500V - 0.11ヘ - 22A - TO-220 /FP- I2/D2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
|
STMicroelectronics
|
| STD22NM20N05 STD22NM20N STD22NM20NT4 |
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh II MOSFET
N-CHANNEL 200V - 0.088ヘ - 22A DPAK ULTRA LOW GATE CHARGE MDmesh⑩ II MOSFET
N-CHANNEL 200V - 0.088Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh?/a> II MOSFET
|
STMicroelectronics
|
| 22N65L-T47-T 22N6511 22N65G-T47-T |
22A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| STB4NC60 8256 STB4NC60T4 |
INTEGRATED EC000 MPU N沟道600V 1.8ohm - 4.2A D2PAK封装MOSFET的第二PowerMesh
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh?II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
From old datasheet system
N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET
N-CHANNEL 600V 1.8 OHM 4.2A D2PAK POWERMESH II MOSFET
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| IXTQ22N50P IXTH22N50P IXTV22N50P IXTV22N50PS |
MOSFET N-CH 500V 22A TO-3P 22 A, 500 V, 0.27 ohm, N-CHANNEL, Si, POWER, MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
|
IXYS, Corp.
IXYS Corporation
|
