| PART |
Description |
Maker |
| SI7392DP-T1 SI7392DP |
N-Ch. Reduced Qg, Fast Switching WFET® VDS = 30V; VGS = ± 20V N沟道Qg，快速开关WFET ® ，VDS=30V; VGS=±20V
N-Channel Reduced Qg, Fast Switching WFET
N-Channel Reduced Qg/ Fast Switching WFET
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| US2410 |
N-Ch 20V Fast Switching MOSFETs
|
ShenZhen XinDeYi Electr...
Unitpower Technology Li...
|
| UM9926 |
N-Ch 20V Fast Switching MOSFETs
|
ShenZhen XinDeYi Electronics Co., Ltd.
Unitpower Technology Limited
|
| AF2301P AF2301PW AF2301PWA AF2301PWLA AF2301PWL |
V(ds): -20V; V(gs): -8V; -2.3A; 20V P-channel enchancement mode MOSFET
20V P-Channel Enhancement Mode MOSFET
Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:21-41 RoHS Compliant: No
MS27467T21B41S
|
Anachip Corp
ETC
|
| QS5U21 |
Transistors > MOS FET > TSMT3,5,6 Series
Small switching (?20V ?1.5A)
From old datasheet system
Small switching (-20V, -1.5A)
|
ROHM[Rohm]
|
| FDFMA2N028Z08 FDFMA2N028Z |
20V Integrated N-Channel PowerTrenchMOSFET and Schottky Diode
Integrated N-Channel PowerTrench㈢ MOSFET and Schottky Diode 20V, 3.7A, 68mヘ
Integrated N-Channel PowerTrench庐 MOSFET and Schottky Diode 20V, 3.7A, 68m惟
Integrated N-Channel PowerTrench? MOSFET and Schottky Diode 20V, 3.7A, 68mΩ
|
Fairchild Semiconductor
|
| ITF87068SQT |
9A, 20V, 0.015 Ohm, P-Channel, 2.5V Specified Power MOSFET(9A, 20V, 0.015Ω P沟道2.5V专用功率MOS场效应管)
|
Intersil Corporation
|
| EN9010A EN9010 |
N-Channel Power MOSFET, 20V, 7.5A, 17mOhm, Dual ECH8
General-Purpose Switching Device Applications
|
ON Semiconductor
Sanyo Semicon Device
|
| SF100CB100 |
From old datasheet system
Isolated power MOSFET module designed for fast switching applications of high voltage and current with a fast recovery diode
|
SANREX[SanRex Corporation]
|
| IRF7401 IRF7402 IRF7401TR |
20V Single N-Channel HEXFET Power MOSFET in a SO-8 package
HEXFET? Power MOSFET
Power MOSFET(Vdss=20V, Rds(on)=0.022ohm)
Power MOSFET(Vdss=20V/ Rds(on)=0.022ohm)
|
IRF[International Rectifier]
|
| IRF7534D1 IRF7534D1TR |
-20V FETKY - MOSFET and Schottky Diode in a Micro 8 package
FETKY MOSFET & Schottky Diode(Vdss=-20V, Rds(on)=0.055ohm, Schottky Vf=0.39V)
Co-packaged HEXFET Power MOSFET and Schottky Diode(同封HEXFET晶体管和肖特基二极管)
|
IRF[International Rectifier]
|
| NTHD3101F NTHD3101FT1 NTHD3101FT1G NTHD3101FT3 NTH |
Power MOSFET and Schottky Diode(20V, 4.4A???MOSFET)
Power MOSFET and Schottky Diode(20V, 4.4A功率MOSFET) 功率MOSFET和肖特基二极管（20V的，4.4A功率MOSFET的）
|
ON Semiconductor
|
