| PART |
Description |
Maker |
| M36W0R6030B0ZAQ M36W0R6030T0 M36W0R6030T0ZAQ M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
ST Microelectronics
|
| M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http://
STMicroelectronics
|
| M36DR432-ZAT M36DR432A100ZA6T M36DR432A100ZA6C M36 |
32 Mbit 2Mb x16, Dual Bank, Page Flash Memory and 4 Mbit 256K x16 SRAM, Multiple Memory Product 32兆位Mb x16插槽，双行，页闪存和4兆位256K x16的SRAM，多个存储产
|
意法半导
STMicroelectronics N.V.
|
| M36D0R6040T0ZAIT M36D0R6040B0ZAI M36D0R6040B0ZAIE |
64 Mbit (4Mb x16, Multiple Bank, Page) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M59DR016 M59DR016C M59DR016C100ZB1T M59DR016C100ZB |
16 Mbit 1Mb x16, Dual Bank, Page 1.8V Supply Flash Memory
16 Mbit 1Mb x16 Dual Bank Page 1.8V Supply Flash Memory
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| M59MR032-GCT M59MR032D100GC6T M59MR032C120ZC6T M59 |
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
|
ST Microelectronics
|
| M59MR032-GCT M59MR032D120ZC6T M59MR032C100GC6T M59 |
32 Mbit 2Mb x16, Mux I/O, Dual Bank, Burst 1.8V Supply Flash Memory
|
意法半导
|
| M29DW324DT |
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M29DW323DB70N1 M29DW323DB70N1E M29DW323DB70N1F M29 |
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block) 3V Supply Flash Memory
|
Numonyx B.V
|
| M29DW324DB70N6E M29DW324DB70ZE6E M29DW324DT70N6 M2 |
32 MBIT (4MB X8 OR 2MB X16, DUAL BANK 16:16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M58PR512JE96ZB5E M58PR512JE96ZB5F M58PR256JE96ZB5E |
256 Mbit or 512 Mbit (x16, Multiple Bank, Multilevel, Burst) 1.8 V supply Flash memories
|
STMicroelectronics
|
