| PART |
Description |
Maker |
| RFS1003 PRFS-1003-0009 PRFS-1003-0005 PRFS-1003-00 |
From old datasheet system
5.1-5.9 GHz U-NII Power Amplifier
The RFS1003 power amplifier is a high-power, high-performance GaAs MESFET IC designed for use in transmit applications in the 5.1-5.9 ...
|
ANADIGICS[ANADIGICS, Inc]
Anadigics Inc
|
| 2SB1713 2SB1714 2SB852K1 2SC2412K1 2SC41021 2SC472 |
-3A / -12V Bipolar transistor
-2A / -30V Bipolar transistor
High-gain Amplifier Transistor (?32V, ?0.3A)
General purpose transistor (50V, 0.15A)
High-voltage Amplifier Transistor (120V, 50mA)
High-Frequency Amplifier Transistor (11V, 50mA, 3.2GHz)
Power transistor (60V, 3A)
Medium power transistor (60V, 2A)
Medium power transistor (60V, 0.5A)
High-gain Amplifier Transistor (32V , 0.3A)
Medium Power Transistor (32V, 1A)
Power Transistor (80V, 1A)
Low VCE(sat) transistor (strobe flash)
High-current Gain Medium Power Transistor (20V, 0.5A)
Low frequency amplifier
4V Drive Nch MOS FET
10V Drive Nch MOS FET
2.5V Drive Nch MOS FET
4 Amps, 600 Volts N-CHANNEL POWER MOSFET
|
UTC
ROHM[Rohm]
|
| OP97FZ OP97EP OP97EJ OP97FP OP97EZ OP97FJ OP97AJ O |
LOW POWER, HIGH PRECISION OPERATIONAL AMPLIFIER OP-AMP, 200 uV OFFSET-MAX, 0.9 MHz BAND WIDTH, MBCY8
Low Power, High Precision Operational Amplifier; Package: CERDIP GLASS SEAL; No of Pins: 8; Temperature Range: Industrial OP-AMP, 60 uV OFFSET-MAX, 0.9 MHz BAND WIDTH, CDIP8
LOW POWER / HIGH PRECISION OPERATIONAL AMPLIFIER
LOW POWER HIGH PRECISION OPERATIONAL AMPLIFIER
|
Analog Devices, Inc.
AD[Analog Devices]
|
| 2SJ201 E001264 |
From old datasheet system
HGIH POWER AMPLIFIER APPLICATION
P CHANNEL MOS TYPE (HIGH POWER AMPLIFIER APPLICATIONS)
|
TOSHIBA[Toshiba Semiconductor]
|
| TGA9083-EEU TGA9083 |
TV 6C 6#8(TWIN) PIN PLUG RECP RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
Monolithic Power Amplifier
|
TriQuint Semiconductor, Inc.
TRIQUINT[TriQuint Semiconductor]
|
| STM915-16 |
890 MHz - 915 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
RF POWER MODULE GSM MOBILE APPLICATIONS . LINEAR POWER AMPLIFIER
|
STMICROELECTRONICS
ST Microelectronics
|
| 30SPA0553 |
27.0-32.0 GHz GaAs MMIC Power Amplifier 27000 MHz - 32000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
|
Mimix Broadband, Inc.
|
| TGA2505 |
13 - 17 GHz 2.5 Watt, 25dB Power Amplifier 13000 MHz - 17000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
13 17 GHz 2.5 Watt, 25dB Power Amplifier
|
TriQuint Semiconductor, Inc.
|
| EMC21L1004 EMC21L1004GN |
High Voltage - High Power GaN-HEMT Power Amplifier Module
|
EUDYNA[Eudyna Devices Inc]
|
| 2SB1063 B1063 |
High Power Amplifier Complementary Pair with 2SD1499
For High Power Amplification
|
PANASONIC[Panasonic Semiconductor]
|
| 2SD2414SM E001183 2SD2414 |
HIGH CURRENT SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS
From old datasheet system
NPN TRIPLE DIFFUSED TYPE (HIGH CURRENT SWITCHING/ POWER AMPLIFIER APPLICATIONS)
|
Toshiba Semiconductor
|
