| PART |
Description |
Maker |
| IRCZ24 |
Power MOSFET(Vdss=55V/ Rds(on)=0.040ohm/ Id=26A)
Power MOSFET(Vdss=55V, Rds(on)=0.040ohm, Id=26A)
60V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
|
International Rectifier
|
| IRFR320 IRFU320 FN2412 IRFR3209A |
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
3.1 A, 400 V, 1.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
From old datasheet system
3.1A 400V 1.800 Ohm N-Channel Power MOSFETs
3.1A, 400V, 1.800 Ohm, N-Channel Power MOSFETs
0.4A, 400V, 3.607 Ohm,N-Channel PowerMOSFET(15A, 50V, 0.150 惟,N娌??澧?己?????OS?烘?搴??)
|
INTERSIL[Intersil Corporation]
HARRIS SEMICONDUCTOR
|
| JANTXV2N7221 JANTX2N7221 IRFM340 IRFM340-15 |
Simple Drive Requirements
400V. N-CHANNEL HEXFET MOSFETTECHNOLOGY
POWER MOSFET
400V Single N-Channel Hi-Rel MOSFET in a TO-254AA package
|
IRF[International Rectifier]
|
| IRF340 IRF340-15 |
Repetitive Avalanche Ratings
TRANSISTORS N-CHANNEL(Vdss=400V, Rds(on)0.55ohm, Id=10A)
HEXFET?TRANSISTORS 400V, N-CHANNEL
400V Single N-Channel Hi-Rel MOSFET in a TO-204AA package
|
IRF[International Rectifier]
|
| IRC730 |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 5-Pin (HEXSense) package
Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=5.5A)
|
IRF[International Rectifier]
|
| APT40M75JN APT40M90JN |
POWER MOS IV 400V 56.0A 0.075 Ohm / 400V 51.0A 0.090 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| STW16NA40 STW16NA40FI STH16NA40 STH16NA40FI W16NA4 |
N-Channel 400V-0.21Ω-16A - TO-247/ISOWATT218 Power MOS Transistors(Ｎ沟道功率ＭＯＳ晶体 N沟道400V -0.21Ω- 16A TO-247/ISOWATT218功率MOS晶体管（不适用马鞍山沟道功率晶体管
N - CHANNEL 400V - 0.21W - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
From old datasheet system
N - CHANNEL 400V - 0.21ohm - 16A - TO-247/ISOWATT218 POWER MOS TRANSISTORS
|
STMicroelectronics N.V.
意法半导
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
SGS Thomson Microelectronics
|
| STB7NA40 4234 STB7NA40-1 STB7NA40T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-263AB
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 6.5A I(D) | TO-262VAR
N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
From old datasheet system
|
STMicroelectronics
|
| IRF1730G IRFI730G IRFI730GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V, Rds(on)=1.0ohm, Id=3.7A)
Power MOSFET(Vdss=400V/ Rds(on)=1.0ohm/ Id=3.7A)
|
IRF[International Rectifier]
|
| IRFI720G IRFI720GPBF |
400V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=400V, Rds(on)=1.8ohm, Id=2.6A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=400V/ Rds(on)=1.8ohm/ Id=2.6A)
|
IRF[International Rectifier]
|
| UF730L-TF3-T UF730-TA3-T UF730L-TA3-T UF730 UF730- |
5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET 6.5 A, 400 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
5.5A, 400V, 1.0 OHM, N-CHANNEL POWER MOSFET 5.5A，为400V.0 Ohm的N沟道功率MOSFET
|
??『绉???′唤??????
UTC[Unisonic Technologies]
友顺科技股份有限公司
Unisonic Technologies Co., Ltd.
|
