PART |
Description |
Maker |
MGF0911A 0911A |
From old datasheet system MITSUBISHI SEMICONDUCTOR (GaAs FET) L, S BAND POWER GaAs FET
|
MITSUBISHI[Mitsubishi Electric Semiconductor] Mitsubishi Electric Corporation
|
CR8AM |
MITSUBISHI SEMICONDUCTOR THYRISTOR
|
Renesas Electronics Corporation
|
BCR16CS |
MITSUBISHI SEMICONDUCTOR 〈TRIAC〉
|
Renesas Electronics Corporation
|
CR02 CR02AM |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) LOW POWER USE PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
BCR12CS |
MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
CR20F |
MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE NON-INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
PS21342-N |
DIP - IPM MITSUBISHI SEMICONDUCTOR Power Module TRANSFER-MOLD TYPE INSULATED TYPE MITSUBISHI SEMICONDUCTOR TRANSFER-MOLD TYPE INSULATED TYPE Intelligent Power Module TRANSFER-MOLD TYPE INSULATED TYPE
|
Mitsubishi Electric Corporation Mitsubishi Electric Semiconductor Powerex Power Semiconductors
|
CR8PM-12 CR8PM-8 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V MITSUBISHI SEMICONDUCTOR (THYRISTOR) MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
CR6CM CR6CM-8 |
CR6CM-8 CR6CM-12 Datasheet 104K/MAR.20.03 CR6CM - 8 CR6CM - 12数据104K/MAR.20.03 MITSUBISHI SEMICONDUCTOR THYRISTOR
|
Renesas Electronics Corporation
|
BCR6 BCR6AM |
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
|
Mitsubishi Electric Corporation
|
Q62703-Q78 LD260 LD262 LD263 LD264 LD265 LD266 LD2 |
GaAs-IR-Lumineszenzdioden-Zeilen GaAs Infrared Emitter Arrays 砷化镓红外Lumineszenzdioden - Zeilen砷化镓红外发射器阵列
|
SIEMENS AG Siemens Group SIEMENS[Siemens Semiconductor Group]
|