PART |
Description |
Maker |
ZVNL120G |
N-CHANNEL ENHANCEMENT MODE LOW THRESHOLD VERTICAL DMOS FET SOT223 N-CHANNEL ENHANCEMENT MODE
|
Zetex Semiconductors Diodes Incorporated
|
STE36N50-DK |
N-CHANNEL ENHANCEMENT MODE POWERMOS TRANSISTORANDULTRA-FAST DIODEINISOTOPPACKAGE N-Channel Enhancement Mode Power MOS Transistor and Ultra-Fast Diode in Isotop Package
|
STMicroelectronics ST Microelectronics
|
TN2410L VN2406E |
N-Channel Enhancement-Mode MOSFET(最小漏源击穿电40V,夹断电.18AN沟道增强型MOSFET晶体 N-Channel Enhancement-Mode MOSFET(???婕???荤┛?靛?40V锛?す???娴?.18A??娌??澧?己??OSFET?朵?绠?
|
Vishay Intertechnology,Inc.
|
STH7NA100FI STW7NA100FI STW7NA100 5759 |
OLD PRODUCT: NOT SUITABLE FOR NEW DESIGN-IN From old datasheet system N-CHANNEL MOSFET N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS N-Channel Enhancement Mode Power MOS Transistors(N沟道增强模式功率MOS晶体 N沟道增强模式功率MOS晶体管(不适用沟道增强模式功率马鞍山晶体管
|
ST Microelectronics STMICROELECTRONICS[STMicroelectronics] 意法半导 TE Connectivity, Ltd.
|
STP4NB50FP STP4NB50 5320 |
N-Channel Enhancement Mode PowerMESHTM MOSFET(N沟道增强模式MOSFET) From old datasheet system N - CHANNEL ENHANCEMENT MODE PowerMESH] MOSFET
|
意法半导 STMicro
|
APM3095PUC-TU APM3095PUC-TUL APM3095PUC-TRL |
P-Channel Enhancement Mode MOSFET 3000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-252 P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics Corporation Anpec Electronics, Corp.
|
2N6781 2N6782 |
100 V, 06 ohm, N-channel enhancement-mode D-MOS power FET 60 V, 06 ohm, N-channel enhancement-mode D-MOS power FET N-CHANNEL ENHANCEMENT-MODE D-MOS PWER FETS
|
Topaz Semiconductor List of Unclassifed Manufacturers
|
APM2317AC-TRL |
P-Channel Enhancement Mode MOSFET 4500 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET P-Channel Enhancement Mode MOSFET P沟道增强型MOS
|
Anpec Electronics, Corp.
|
ZXMN2B14FHTA ZXMN2B14FH |
20V N-CHANNEL ENHANCEMENT MODE MOSFET WITH LOW GATE DRIVE CAPABILITY 20V SOT23 N-channel enhancement mode MOSFET
|
Diodes Incorporated
|
APM9968C APM9968COC-TR |
20 V, N-channel enhancement mode MOSFET N-Channel Enhancement Mode MOSFET N沟道增强型MOS From old datasheet system
|
Anpec Electronics, Corp. ANPEC[Anpec Electronics Coropration] ANPEC Electronics Corporation
|
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|