| PART |
Description |
Maker |
| FMP76-010T |
Trench P & N-Channel Power MOSFET Common Drain Topology
62 A, 100 V, 0.011 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET PLASTIC, ISOPLUS, I4-PAK-5
|
IXYS Corporation
IXYS, Corp.
|
| FDMC8610212 |
N-Channel Power Trench? MOSFET 100 V, 20 A, 24 mΩ
|
Fairchild Semiconductor
|
| FDS86106 |
N-Channel Power Trench? MOSFET 100 V, 3.4 A, 105 mΩ
|
Fairchild Semiconductor
|
| FDB3652NL |
N-Channel Power Trench MOSFET, 100V, 61A, 0.016 Ohms 9 A, 100 V, 0.016 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
| FDMC86116LZ |
100V N-Channel Power TrenchMOSFET
N-Channel Power Trench MOSFET 100 V, 7.5 A, 103 mΩ
|
Fairchild Semiconductor
|
| PMV16UN |
20 V, 5.8 A N-channel Trench MOSFET Trench MOSFET technology Relay driver
|
TY Semiconductor Co., Ltd
|
| FDN5630 |
N-Channel Power Trench MOSFET
VDS (V) = 60V RDS(ON)100 m (VGS = 10V) Optimized for use in high frequency DC/DC converters
|
TY Semicondutor
TY Semiconductor Co., Ltd
|
| SI4482DY SI4482DY-T1 |
30V N-Channel PowerTrench MOSFET 30V的N沟道的PowerTrench MOSFET
N-Channel 100-V (D-S) MOSFET
N-Channel, 100-V Single
|
Vishay Intertechnology, Inc.
VISAY[Vishay Siliconix]
|
| PPF5210M |
P Channel MOSFET; Package: TO-254; ID (A): 19; RDS(on) (Ohms): 0.07; PD (W): 150; BVDSS (V): 100; Rq: 0.83; 30 A, 100 V, 0.07 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-254AA
|
Microsemi, Corp.
|
| FDG6332C FDG6332CNL |
Tantalum Molded Capacitor; Capacitance: 220uF; Voltage: 6.3V; Packaging: Tape & Reel 700 mA, 20 V, 2 CHANNEL, N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET
20V N & P-Channel PowerTrench MOSFETs
20V N &P - Channel Power Trench MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| FMM300-0055P |
Trench Power MOSFET 300 A, 55 V, 0.0036 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
MOSFET Modules
|
IXYS, Corp.
IXYS Corporation
|
|
