PART |
Description |
Maker |
BLC573 |
HF / VHF power LDMOS transistor
|
NXP Semiconductors
|
BLF369 |
VHF power LDMOS transistor From old datasheet system
|
PHILIPS
|
BLF178P |
Power LDMOS transistor 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET
|
NXP Semiconductors N.V.
|
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
BLL1214-250R |
L-band radar LDMOS transistor L BAND, Si, N-CHANNEL, RF POWER, MOSFET L-band radar LDMOS transistor BLL1214-250R<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; LDMOS L-band radar power transistor
|
NXP Semiconductors N.V.
|
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
BLF6G27LS-40P BLF6G27L-40P |
40 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF871S112 BLF871-15 |
A 100 W LDMOS RF power transistor for broadcast transmitter applications and industrial applications. UHF power LDMOS transistor
|
NXP Semiconductors N.V.
|
BLF578XR |
Product descriptionA 1200 W LDMOS power transistor for broadcast applications and industrial applications in the HF to 500 MHz band. Power LDMOS transistor BLF578XR<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
MW4IC2230MBR1 MW4IC2230GMBR1 MW4IC2230 |
MW4IC2230MBR1, MW4IC2230GMBR1 W-CDMA 2.11-2.17 GHz, 30 W, 28 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
|
MOTOROLA[Motorola, Inc]
|