PART |
Description |
Maker |
M30L0R7000XX M30L0R7000B0 M30L0R7000B0ZAQ M30L0R70 |
128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory
|
STMICROELECTRONICS[STMicroelectronics]
|
M29DW128F M29DW128F70NF1 M29DW128F70NF1E M29DW128F |
128 Mbit (16Mb x8 or 8Mb x16, Multiple Bank, Page, Boot Block) 3V supply Flash memory
|
Numonyx B.V
|
M30L0R7000T0ZAQE M30L0R7000B0ZAQ M30L0R7000XX M30L |
AB 35C 7#12,28#16 PIN RECP 128 Mbit (8Mb x16, Multiple Bank, Multi-Level, Burst), 1.8V Supply Flash Memory CAP 0.047UF 100V 20% X7R DIP-2 BULK R-MIL-C-39014 128兆位兆x16插槽,多银行,多层次,多突发),1.8V电源快闪记忆
|
意法半导 STMicroelectronics N.V.
|
M29DW127G M29DW127G70NF6E |
128-Mbit (8 Mbit x16 or 16 Mbit x8 , multiple bank, page, dual boot) 3 V supply flash memory
|
Numonyx B.V
|
M29W128FL60N6E M29W128FL60N6F M29W128FL70ZA6E M29W |
128 Mbit (8Mb x 16 or 16Mb x 8, Page, Uniform Block) 3V Supply Flash Memory
|
Numonyx B.V
|
M29DW640D70ZA1 M29DW640D70ZA1F M29DW640D70ZA1E M29 |
64 Mbit (8Mb x8 or 4Mb x16, Multiple Bank, Page, Boot Block) 3V Supply Flash Memory 64兆位兆x8Mb的x16插槽,多行,页,引导块)3V电源快闪记忆
|
意法半导 STMicroelectronics N.V.
|
M58LR128HD70ZB5E M58LR128HD70ZB5U |
128 Mbit (x16, Mux I/O, Multiple Bank, Multilevel interface, Burst)
|
Numonyx B.V
|
M58LR128HB M58LR128HB85ZB5E M58LR128HB85ZB5F M58LR |
128 Mbit (8 Mb ??6, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories 128 Mbit (8 Mb 】16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply Flash memories
|
STMICROELECTRONICS[STMicroelectronics]
|
M58LT128HSB M58LT128HSB8ZA6 M58LT128HSB8ZA6E M58LT |
128 Mbit (8 Mb ×16, multiple bank, multilevel interface, burst) 1.8 V supply, secure Flash memories
|
Numonyx B.V
|
M58LT128HSB M58LT128HST M58LT128HST8ZA6E M58LT128H |
128-Mbit (8 Mb ×16, Multiple Bank, Multilevel interface, Burst) 1.8 V supply, Secure Flash memories
|
STMicroelectronics
|
M30LW128D M30LW128D110N1T M30LW128D110N6T M30LW128 |
128 Mbit (two 64Mbit, x8/x16, Uniform Block, Flash Memories) 3V Supply, Multiple Memory Product
|
ST Microelectronics 意法半导
|