| PART |
Description |
Maker |
| 6A8-G 6A05-G 6A10-G 6A1-G 6A2-G 6A4-G 6A6-G |
General Purpose Rectif
|
Comchip Technology Co., Ltd.
COMCHIP[Comchip Technology]
|
| SEF112B |
1.0 A High Voltage Ultrafast Rectif
|
SeCoS Halbleitertechnologie GmbH
|
| 2N29071ADS-1 2N29071AXC-1 2N29071ADC-1 2N29071ABC- |
600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR
PNP Transistor
Schottky Rectifier; Current Rating:30A; Leaded Process Compatible:Yes RoHS Compliant: Yes
Circular Connector; No. of Contacts:13; Series:LJT06R; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:11; Circular Contact Gender:Pin; Circular Shell Style:Straight Plug; Insert Arrangement:11-35
ER 4C 4#16S PIN PLUG
SWITCHING TRANSISTOR PNP SILICON 开关晶体管的新进步党硅
|
MICROSEMI CORP-LOWELL
http://
Microsemi Corporation
Microsemi, Corp.
|
| AP1034 AP1038 AP1023 AP1145 AP1037 AP1022 AP1065 A |
TRANSISTOR | BJT | PNP | 275V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-3
TRANSISTOR | BJT | PNP | 60V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 250V V(BR)CEO | 10A I(C) | TO-66
TRANSISTOR | BJT | PNP | 300V V(BR)CEO | 10A I(C) | TO-210AC
TRANSISTOR | BJT | PNP | 170V V(BR)CEO | 10A I(C) | TO-5
TRANSISTOR | BJT | PNP | 150V V(BR)CEO | 10A I(C) | TO-33
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 10A I(C) | TO-3 晶体管|晶体管|进步党| 120伏特五（巴西）总裁| 10A条一（c）|
|
SCHURTER AG
|
| CA3096_04 CA3096 CA3096A CA3096AE CA3096AM CA3096A |
NPN/PNP Transistor Array, High Voltage, Enhanced Icbo, Iceo and Vce(sat)
NPN/PNP Transistor Array, High Voltage, General Purpose, Relaxed Parameters
NPN/PNP Transistor Arrays
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-012AC
50 mA, 35 V, 5 CHANNEL, NPN AND PNP, Si, SMALL SIGNAL TRANSISTOR, MS-001BB
|
INTERSIL[Intersil Corporation]
|
| BC327-16 BC328-16 BC327 BC327-25 BC327-40 BC328-40 |
Si-Epitaxial PlanarTransistors 800 mA, 25 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
EPITAXIAL PLANAR PNP TRANSISTOR (GENERAL PURPOSE/ SWITCHING)
Amplifier Transistors(PNP)
PNP general purpose transistor
|
KEC(Korea Electronics)
Diotec Semiconductor AG
DIOTEC[Diotec Semiconductor]
Motorola Inc
Philips Semiconductors
|
| 2N2905A |
HIGH SPEED MEDIUM POWER PNP SWITCHING TRANSISTOR 600 mA, 60 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-39
High Speed, Saturated Switch PNP Silicon Transistor(高速、饱和开关型PNP硅晶体管) 高速，饱和硅晶体管开关进步党（高速，饱和开关型进步党硅晶体管）
|
TT electronics Semelab, Ltd.
STMicroelectronics N.V.
SEME-LAB[Seme LAB]
|
| PMEM1505PG |
PNP transistor/Schottky rectifier module
|
PHILIPS[Philips Semiconductors]
|
| KRA521T KRA523T KRA524T KRA522T KRA526T KRA525T |
Built in Bias Resistor
(KRA521T - KRA526T) EPITAXIAL PLANAR PNP TRANSISTOR
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH CURRENT SWITCHING, INTERFACE CIRCUIT AND DRIVER CIRCUIT)
800 mA, 50 V, 2 CHANNEL, PNP, Si, SMALL SIGNAL TRANSISTOR
|
Korea Electronics (KEC)
|
| PBSS5250T PBSS5250T215 |
50 V; 2 A PNP low VCEsat (BISS) transistor; Package: SOT23 (TO-236AB); Container: Tape reel smd 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-236AB
50 V, 2 A PNP low VCEsat (BISS) transistor
50 V 2 A PNP low VCEsat (BISS) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| 2SB1026 2SB1026DL 2SB1026DM |
Silicon PNP Transistor
Silicon PNP Epitaxial Transistor
TRANSISTOR | BJT | PNP | 100V V(BR)CEO | 1A I(C) | TO-243 晶体管|晶体管|进步党| 100V的五（巴西）总裁| 1A条一（c）|43
5-Pin µP Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
|
Renesas Technology / Hitachi Semiconductor
Maxim Integrated Products, Inc.
|
