| PART |
Description |
Maker |
| K6F4016R6CFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4016R4DFAMILY |
256K x 16bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F2008T2E |
256K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
| K6F4016U4G |
256K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung semiconductor
|
| LP62S16256FU-70LLI LP62S16256FU-55LLI |
70ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
| KM68FS2000 |
256Kx8 Bit Super Low Power and Low Voltage Full CMOS Static RAM(256K x 8位超低功耗和低电压CMOS 静RAM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| K6F2008U2E-YF70 DS_K6F2008U2E K6F2008U2E-EF55 K6F2 |
256Kx8 bit Super Low Power and Low Voltage Full CMOS Static RAM 256Kx8位超低功耗和低电压的CMOS静态RAM
256K X 8 STANDARD SRAM, 55 ns, PBGA36
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
|
| AS6C4016 |
256K X 16 BIT SUPER LOW POWER CMOS SRAM
Fully static operation
|
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
Alliance Semiconductor ...
|
| A62S8316 A62S8316G-70S A62S8316G-70SI A62S8316V-70 |
256K X 16 BIT LOW VOLTAGE CMOS SRAM
70ns; 50mA 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology Corporation
AMICC[AMIC Technology]
|
| HY51VS18163HG HY51V18163HGT-6 HY51V18163HGJ HY51V1 |
Dynamic RAM organized 1,048,576 words x 16bit, 50ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 70ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, self refresh, 50ns, low power
1M x 16Bit EDO DRAM 100万16 EDO公司的DRAM
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 50 ns, PDSO44
1M x 16Bit EDO DRAM 1M X 16 EDO DRAM, 60 ns, PDSO44
Dynamic RAM organized 1,048,576 words x 16bit, 60ns, low power
Dynamic RAM organized 1,048,576 words x 16bit, 70ns, low power
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor, Inc.
|
| LP62S16256FU-55LLT |
55ns; operating current:40mA; standby current:10uA; 256K x 16bit low voltage CMOS SRAM
|
AMIC Technology
|
