| PART |
Description |
Maker |
| EM610FV16CW-12LL EM610FV16CW-55LL EM610FV16CW-55S |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
|
| EM6321FP16AS-70LL EM6321FP16AS-70S EM6321FP16AS-85 |
512K x8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Emerging Memory & Logic Solutions Inc
Emerging Memory & Logic...
|
| K6F8016R6D K6F8016R6D-F |
512K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
Samsung Electronic
Samsung semiconductor
|
| K6F8016R6BFAMILY |
512K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM Data Sheet
|
Samsung Electronic
|
| K6F4008U2G-F K6F4008U2G |
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM 12k × 8位超低功耗和低电压的CMOS静态RAM
|
Samsung Semiconductor Co., Ltd.
Samsung Electronic
|
| K6F4008U2E K6F4008U2E-EF55 K6F4008U2E-EF70 K6F4008 |
From old datasheet system
512K x 8 bit Super Low Power and Low Voltage Full CMOS Static RAM
|
SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Electronic
|
| HY62KF0840 |
High speed, super low power and 4M bit full CMOS SRAM organized as 512K words by 8bits
|
HYNIX
|
| BS62LV4006 BS62LV4006EC-70 BS62LV4006PC BS62LV4006 |
Very Low Power/Voltage CMOS SRAM 512K X 8 bit
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
Low Current Operation at 250??A???Low Reverse Leakage,Low Noise Zener Diode(250??A?・￥?????μ?μ?????°????????????μ?μ?????????a?￡°???é???o3?o???????)
Asynchronous 4M(512Kx8) bits Static RAM
|
BRILLIANCE SEMICONDUCTOR, INC.
BSI[Brilliance Semiconductor]
Brilliance Semiconducto...
|
| KM68V1000B KM68V1000BL KM68V1000BL_L-L KM68V1000BL |
128K X 8bit Low Power and Low Voltage CMOS Statinc RAM
|
Samsung semiconductor
|
| AM29SL800DT90EI AM29SL800DT90WCC AM29SL800DT90WAC |
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PDSO48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 90 ns, PBGA48
8 Megabit (1 M x 8-Bit/512 K x 16-Bit) CMOS 1.8 Volt-only Super Low Voltage Flash Memory 512K X 16 FLASH 1.8V PROM, 120 ns, PBGA48
|
Advanced Micro Devices, Inc.
|
| A29002V-100 A29002-70 A29002L-70 A29002V-70 A29002 |
110ns 20mA 256K x 8bit CMOS 5.0V-only
70ns 20mA 256K x 8bit CMOS 5.0V-only
100ns 20mA 256K x 8bit CMOS 5.0V-only
120ns 20mA 256K x 8bit CMOS 5.0V-only
150ns 20mA 256K x 8bit CMOS 5.0V-only
90ns 20mA 256K x 8bit CMOS 5.0V-only
55ns 20mA 256K x 8bit CMOS 5.0V-only
|
AMIC Technology
|
| AS6WA5128 |
3.0V to 3.6V 512K × 8 Intelliwatt low-power CMOS SRAM(3.0V 3.6V 512K × 8 Intelliwatt 低功CMOS 静态RAM)
3.0V to 3.6V 512K 】 8 Intelliwatt low-power CMOS SRAM
3.0V to 3.6V 512K x 8 Intelliwatt low-power CMOS SRAM
|
ALSC[Alliance Semiconductor Corporation]
|
