PART |
Description |
Maker |
LC382161T-17 |
2 MEG(65536 words x 16 bits x 2 banks) Synchronous DRAM
|
Sanyo Semicon Device
|
IS45S16100C1-7TA1 IS45S16100C1-7TLA1 IS45S16100C1- |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
Integrated Silicon Solution, Inc.
|
IS42S32800B-6BL IS42S32800B-6BI |
2M Words x 32 Bits x 4 Banks (256-MBIT) SYNCHRONOUS DYNAMIC RAM
|
http://
|
IS45S16100C1-7TLA IS45S16100C1-7TLA1 IS45S16100C1- |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM
|
ISSI[Integrated Silicon Solution, Inc]
|
K4C89323AF-GCF5 K4C89323AF-GCF6 K4C89323AF-GCFB K4 |
2,097,152-WORDS x 4 BANKS x 36-BITS DOUBLE DATA RATE Network-DRAM
|
Samsung semiconductor
|
EDE1104AASE-5C-E EDE1108AASE-5C-E EDE1104AASE-6E-E |
1G bits DDR2 SDRAM organized as 33,554,432 words x 8 banks. 256M X 4 DDR DRAM, 0.6 ns, PBGA68
|
Elpida Memory, Inc.
|
IS42S16100C1-6T IS42S16100C1-5T IS42S16100C1-5TL I |
512K Words x 16 Bits x 2 Banks (16-MBIT) SYNCHRONOUS DYNAMIC RAM 1M X 16 SYNCHRONOUS DRAM, 5.5 ns, PDSO50
|
Integrated Silicon Solution, Inc. 天津新技术产业园区管理委员会
|
EDD2508AKTA-5B-E EDD2508AKTA-5C-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
Elpida Memory, Inc.
|
EDD2508AKTA-5C-E EDD2508AKTA-5B-E EDD2508AKTA-5-E |
256M bits DDR SDRAM (32M words x 8 bits, DDR400)
|
ELPIDA[Elpida Memory]
|
EDS2532EEBH-75-E |
256M bits SDRAM (8M words x 32 bits) 8M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90
|
Elpida Memory, Inc.
|