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GT5J301 - INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

GT5J301_5545417.PDF Datasheet

Part No.

GT5J301

Description

INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

File Size

313.36K / 7 Page

Maker

TOSHIBA

JITONG TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor

Part: GT50J101

Maker: TOSHIBA(东芝)

Pack: TO-3PL

Stock: 216

Unit price for :

50: $2.71

100: $2.58

1000: $2.44

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Full text search : INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

Product Description search : INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS

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IRG4BC40K	Insulated Gate Bipolar Transistors (IGBTs)(短路额定超快速绝缘栅型双极型晶体绝缘门双极晶体管IGBTs）（短路额定超快速绝缘栅型双极型晶体管） INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A) 600V UltraFast 8-25 kHz Discrete IGBT in a TO-220AB package	International Rectifier, Corp. IRF[International Rectifier]
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MGW12N120-D	Insulated Gate Bipolar Transistor N-Channel Enhancement-Mode Silicon Gate	ON Semiconductor
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