| PART |
Description |
Maker |
| AMS2301 |
Super high density cell design for
|
Advanced Monolithic Systems Ltd
|
| LPM9029C |
Super high density cell design
|
Lowpower Semiconductor ...
|
| AMS3400SRG |
Super high density cell design for extremely low RDS(ON)
|
Advanced Monolithic Systems Ltd
|
| ME2302A29T |
High-density cell design for ultra low on-resistance
|
SUNMATE electronic Co.,...
|
| EB201 EB201D |
High Cell Density MOSFETs Low On-Resistance Affords New Design Options
|
ONSEMI[ON Semiconductor]
|
| 2N7000 |
High density cell design for low RDS(ON) Voltage controlled small signal switch
|
TY Semiconductor Co., Ltd
|
| STP4407 |
The STP4407 is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| ST2341A |
ST2341A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4426 |
STN4426 is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
| STN4488L |
STN4488L is the N-Channel logic enhancement mode power field effect transistors which are produced using high cell density DMOS trench technology.
|
Stanson Technology
|
| STP4435A |
STP4435A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.
|
Stanson Technology
|
