| PART |
Description |
Maker |
| IRG7IC28U IRG7IC28UPBF |
600V Discrete PDP Trench IGBT in a TO-220 FullPak package
|
International Rectifier
|
| STGP7NB60 STGP7NB60H 6201 |
From old datasheet system
N-CHANNEL 7A - 600V TO-220 PowerMESH TM IGBT
N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT
N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT N沟道A - 600V 220 PowerMESH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| IRG4PC40U IRG4PC40U-EPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
40 A, 600 V, N-CHANNEL IGBT, TO-247AD TO-247AD, 3 PIN
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
|
Vishay Intertechnology, Inc.
International Rectifier
|
| SGP23N60UFTU |
Discrete, High Performance IGBT; Package: TO-220; No of Pins: 3; Container: Rail 23 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
Fairchild Semiconductor, Corp.
|
| IRG4PC40K |
600V UltraFast 8-25 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.1V, @Vge=15V, Ic=25A)
|
IRF[International Rectifier]
|
| STGP12NB60H 6708 |
N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT
N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT
From old datasheet system
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
|
| 15ETL06S 15ETL06 15ETL06-1 15ETL06FP |
Ultra-low VF Hyperfast Rectifier for Discontinuous Mode PFC
600V 15A Hyperfast Discrete Diode in a D2Pak package
600V 15A Hyperfast Discrete Diode in a TO-220 FullPak package
600V 15A Hyperfast Discrete Diode in a TO-262 package
600V 15A Hyperfast Discrete Diode in a TO-220AC package
Ultra-low VF Hyperfast Rectifier for Discontinuous Mode PFC 超低VF Hyperfast整流器不连续模式PFC
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| IRG4PC30U IRG4PC30UPBF |
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.95V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| IRG4BC40W IRG4BC40W-S |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.05V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| IRGSL4B60KD1 IRGS4B60KD1 IRGB4B60KD1 |
600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package
600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package
600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| IRGSL4B60K IRGB4B60K IRGS4B60K |
600V Low VCEon Copack IGBT in a TO-262 package
600V Low VCEon Copack IGBT in a D2Pak package
600V Low VCEon Copack IGBT in a TO-220 package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
