| PART |
Description |
Maker |
| S13003A-D |
Bipolar Junction Transistor
|
Shenzhen Jingdao Electr...
|
| 2N4234E3 2N4236E3 |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| JANSM2N3057A |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| JANSM2N3019S |
BJT( BiPolar Junction Transistor)
|
Microsemi
|
| SBW13009 |
130W Bipolar Junction Transistor, 12A Ic, 400V Vceo, 700V Vces
High Voltage Fast-Switching NPN Power Transistor
|
SEMIWELL[SemiWell Semiconductor]
|
| MMBT2131T3 MMBT2131T1 ON2108 |
GENERAL PURPOSE TRANSISTORS
From old datasheet system
PNP Bipolar Junction Transistor
|
ONSEMI[ON Semiconductor]
|
| MMBT2132 MMBT2132T1-D |
General Purpose Transistors NPN Bipolar Junction Transistor (Complementary PNP Device: MMBT2131T1/T3)
|
ON Semiconductor
|
| 2SB1143S 2SB1143T 2SD1683S |
Bipolar Transistor
Bipolar Transistor
Bipolar Transistor (-)50V, (-)4A, Low VCE(sat), (PNP)NPN Single TO-126ML
|
ON Semiconductor
|
| CT90AM-18 |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
INSULATED GATE BIPOLAR TRANSISTOR
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| CJD127 CJD127PNP CJD122 CJD122NPN CJD122-NPN |
SMD Bipolar Power Transistor NPN Darlington
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR 互补性的芯片功率达林顿晶体管
From old datasheet system
SMD Bipolar Power Transistor PNP Darlington
|
Central Semiconductor, Corp.
Central Semiconductor Corp.
CENTRAL[Central Semiconductor Corp]
|
| 5KP170 5KP170A |
170.00V; 5mA ;5000W peak pulse power; glass passivated junction transient voltage suppressor. For bipolar applications
|
MDE Semiconductor
|
| 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132 |
Medium Power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium Power Transistor (-32A,-1A)
Transistors > Small Signal Bipolar Transistors(up to 0.6W)
Transistors > Medium Power Bipolar Transistors(0.5W-1.0W)
|
Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
|
