| PART |
Description |
Maker |
| STGB20H60DF STGP20H60DF STGF20H60DF |
600 V, 20 A high speed trench gate field-stop IGBT
|
ST Microelectronics
STMicroelectronics
|
| STGW60H65DFB |
Trench gate field-stop IGBT, HB series 650 V, 60 A high speed
|
ST Microelectronics
|
| STGW40V60DLF |
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
|
ST Microelectronics
|
| STGW40H120DF2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
| STGB30H60DF STGF30H60DF STGP30H60DF STGW30H60DF |
Low thermal resistance
600 V, 30 A high speed trench gate field-stop IGBT
|
STMicroelectronics
ST Microelectronics
|
| IXGP10N60A |
Low VCE(sat) IGBT, High speed IGBT 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG150Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Toshiba Corporation
|
| SGS23N60UFD SGS23N60UFDTU |
High speed switching
Ultra-Fast IGBT
Discrete, High Performance IGBT with Diode
|
FAIRCHILD[Fairchild Semiconductor]
|
| Q67040S4722 Q67040S4724 IGP30N60T IGW30N60T |
1200V IGBT for frequencies up to 10kHz for hard switching applications and up to 30kHz for soft switching. Combined Trench- and Fieldstop-Technology. ...
LOW LOSS IGBT IN TRENCH AND FILEDSTOP TECHNOLOGY
|
INFINEON[Infineon Technologies AG]
|
| IXGN50N120C3H1 |
High-Speed PT IGBT for 20-50 kHz Switching
95 A, 1200 V, N-CHANNEL IGBT
|
IXYS Corporation
|
| IXGH25N100AU1 |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
