| PART |
Description |
Maker |
| IGW15N120H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies AG
|
| IGW20N60H3 |
High speed IGBT in Trench and Fieldstop technology
|
Infineon Technologies A...
|
| STGW40H120DF2 |
Trench gate field-stop IGBT, H series 1200 V, 40 A high speed
|
ST Microelectronics
|
| STGB30V60DF STGWT30V60DF |
Trench gate field-stop IGBT, V series 600 V, 30 A very high speed
|
ST Microelectronics
|
| STGWT80V60F STGFW80V60F |
Low thermal resistance
Trench gate field-stop IGBT, V series 600 V, 80 A very high speed
|
STMicroelectronics
ST Microelectronics
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
| MG100Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
|
| IXSP10N60B2D1 IXSA10N60B2D1 |
High Speed IGBT with Diode 20 A, 600 V, N-CHANNEL IGBT, TO-220AB
|
IXYS, Corp.
IXYS[IXYS Corporation]
|
| IXGC16N60C2 IXGC16N60C2D1 |
HiPerFAST IGBT C2-Class High Speed IGBT in ISOPLUS220 Case
|
IXYS
|
