| PART |
Description |
Maker |
| IRFB9N65 IRFB9N65A |
Power MOSFET(Vdss=650V/ Rds(on)max=0.93ohm/ Id=8.5A)
650V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
|
International Rectifier
|
| STP15NM65N STF15NM65N STW15NM65N STB15NM65N STI15N |
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh Power MOSFET
N-channel 650V - 0.25ヘ - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh⑩ Power MOSFET
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh?/a> Power MOSFET
|
STMicroelectronics
|
| 9N65 9N65G-TA3-T 9N65G-TF3-T 9N65L-TA3-T 9N65L-TF3 |
9A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 5N65Z |
5A 650V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
| 7N65ZL-TA3-T 7N65ZL-TQ2-R 7N65ZL-TQ2-T |
7.4A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| 7N65L-TF2-T 7N65G-T2Q-T 7N65G-TA3-T 7N65G-TF1-T 7N |
7.4A, 650V N-CHANNEL POWER MOSFET
|
Unisonic Technologies
|
| TFP7N65 |
N-Channel Power MOSFET 7.2A, 650V, 1.5Ω
|
Tak Cheong Electronics (Holdings) Co.,Ltd
|
| 4N65Z |
40A 650V N-CHANNEL POWER MOSFET
|
UNISONIC TECHNOLOGIES
|
| PJF10N65 PJP10N65 |
650V N-Channel Enhancement Mode MOSFET
10 A, 650 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
Pan Jit International Inc.
|
| ICE2B0565 ICE2A0565 ICE2A0565Z ICE2A180Z ICE2A265 |
Integrated Power ICs - max Pout=13W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=12W, Vbreak=650V, fop=100kHz, DIP7
Integrated Power ICs - max. Pout=17W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=32W, fop=100kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=31W, fop=100kHz, Vbreak=800V, DIP7
Integrated Power ICs - max. Pout=130W, fop=100kHz, Vbreak=650V, TO220
Integrated Power ICs - max. Pout=18W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=32W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=45W, fop=67kHz, Vbreak=650V, DIP8
Integrated Power ICs - max. Pout=130W, fop=67kHz, Vbreak=650V, TO220
|
Infineon
|
|
