| PART |
Description |
Maker |
| TPC6D03 |
Multi-Chip Device Silicon PNP Epitaxial Type, Schottky Barrier Diode High-Speed Switching Applications DC-DC Converter Applications
|
TOSHIBA
|
| MCA104 |
Multi-Chip Array Two NPN and Two PNP High Speed / Medium Power Switching Transistors
MULTI-CHIP ARRAY TWO NPN AND TWO PNP HIGH SPEED, MEDIUM POWER SWITCHING TRANSISTORS IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE
|
Semelab PLC
SEME-LAB[Seme LAB]
|
| HN2E04F |
Multi-chip discrete device (PNP SW diode)
|
TOSHIBA
|
| UMD2N |
NPN-PNP built-in resistors Multi-Chip Digital Transistor
|
SeCoS
|
| CMLM0705 |
MULTI DISCRETE MODULE SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE⑩ SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
MULTI DISCRETE MODULE??SURFACE MOUNT SILICON SWITCHING PNP TRANSISTOR AND LOW VF SILICON SCHOTTKY DIODE
|
CENTRAL[Central Semiconductor Corp]
|
| SSM6G18NU |
Silicon P Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
Multi-chip discrete device (P-ch SBD)
|
Toshiba Semiconductor
|
| IMZ2A |
COMPLEMENTARY DUAL GENERAL PURPOSE AMPLIFIER TRANSIS
|
Pan Jit International Inc.
|
| NN5099K |
10.5V; 1481mW; silicon multi chip IC. For color TV
IC DIVISION
|
Panasonic
ETC[ETC]
|
| TPCP8J0107 |
TOSHIBA Multi-chip Device Silicon P Channel MOS Type (U-MOSIV) /Silicon NPN Epitaxial Type
|
Toshiba Semiconductor
|
| TH50VSF3582AASB TH50VSF3583AASB |
TOSHIBA MULTI-CHIP INTEGRATED CIRCUIT SILICON GATE CMOS
|
TOSHIBA[Toshiba Semiconductor]
|
| M36L0T7050B2 M36L0T7050B2ZAQ M36L0T7050B2ZAQE M36L |
128 Mbit (Multiple Bank, Multi-Level, Burst) Flash memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
Numonyx B.V
|
