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AOB10B60D - 600V, 10A Alpha IGBT with Diode

AOB10B60D_5362345.PDF Datasheet


 Full text search : 600V, 10A Alpha IGBT with Diode
 Product Description search : 600V, 10A Alpha IGBT with Diode


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From old datasheet system
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FUJI[Fuji Electric]
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STMICROELECTRONICS[STMicroelectronics]
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Fairchild Semiconductor
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Fairchild Semiconductor
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Renesas Electronics Corporation
PS21963-4 PS21963-4A PS21963-4C PS21963-4W 600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
Mitsubishi Electric Semiconductor
PS21963-S 600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
Mitsubishi Electric Semiconductor
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST 600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A)
TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
IRF[International Rectifier]
 
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AOB10B60D 的参数 AOB10B60D Noise AOB10B60D Transistor AOB10B60D Module AOB10B60D Rail
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