PART |
Description |
Maker |
AOTF15B60D |
600V, 15A Alpha IGBT with Diode
|
Alpha & Omega Semiconductors
|
AOB15B60D |
600V, 15A Alpha IGBT with Diode
|
Alpha & Omega Semiconductors
|
STGB10N60L 6210 |
N-CHANNEL 10A - 600V D2PAK LOGIC LEVEL IGBT N-CHANNEL 10A - 600V D 2 PAK LOGIC LEVEL IGBT From old datasheet system
|
SGS Thomson Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
STGP10NC60H P10NC60H |
N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH IGBT N-CHANNEL 10A - 600V - TO-220 VERY FAST PowerMESH⑩ IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
6MBI10F-060 |
IGBT (600V 10A)
|
FUJI[Fuji Electric]
|
STGD6NC60HD07 STGD10NC60KDT4 STGD10NC60KD STGD6NC6 |
N-channel 600V - 7A - DPAK Very fast PowerMESH TM IGBT N-channel 600V - 10A - DPAK Short circuit rated PowerMESH TM IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
FGPF10N60UNDF |
600V, 10A, Short Circuit Rated IGBT
|
Fairchild Semiconductor
|
FGPF10N60UNDF |
600V, 10A Short Circuit Rated IGBT
|
Fairchild Semiconductor
|
RJQ6008DPM-00T0 RJQ6008DPM-15 |
600V - 10A - IGBT and Diode High Speed Power Switching
|
Renesas Electronics Corporation
|
PS21963-4 PS21963-4A PS21963-4C PS21963-4W |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
PS21963-S |
600V/10A low-loss 5th generation IGBT inverter bridge for three phase DC-to-AC power conversion
|
Mitsubishi Electric Semiconductor
|
IRG4BC20WS IRG4BC20W-S IRG4BC20W-STRR IRG4BC20W-ST |
600V Warp 60-150 kHz Discrete IGBT in a D2-Pak package INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=2.16V, @Vge=15V, Ic=6.5A) TRANSISTOR | IGBT | N-CHAN | 600V V(BR)CES | 13A I(C) | TO-263AB
|
IRF[International Rectifier]
|