PART |
Description |
Maker |
STGB3NB60SD STGB3NB60SDT4 |
N-CHANNEL 3A - 600V D2PAK Power MESHIGBT N沟道3A 600V的D2PAK封装IGBT的电力网格⑩ Transient Surge Protection Thyristor; Package/Case:6-SOIC; Current, It av:2.2A; Reel Quantity:1500; Capacitance:100pF; Forward Current:5A; Forward Voltage:12V; Holding Current:100uA; Mounting Type:Surface Mount N沟道3A 600V的IGBT的采用D2PAK POWERMESH N-CHANNEL 3A - 600V D2PAK Power MESH IGBT N-CHANNEL 3A - 600V D2PAK POWERMESH IGBT N-CHANNEL 3A - 600V D2PAK Power MESH⑩ IGBT
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ST Microelectronics STMicroelectronics N.V. STMICROELECTRONICS[STMicroelectronics]
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AP2302AGN-HF |
Advanced Power MOSFE
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TY Semiconductor Co., Ltd
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IRFBC40S IRFBC40L IRFBC40STRR IRFBC40STRL |
600V Single N-Channel HEXFET Power MOSFET in a TO-262 package 600V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Power MOSFET(Vdss=600V, Rds(on)=1.2ohm, Id=6.2A) Power MOSFET(Vdss=600V Rds(on)=1.2ohm Id=6.2A) CAP CER 1500PF 100V 20% X7R 0603 功率MOSFET(减振钢板基本\u003d 600V电压的Rds(on)\u003d 1.2ohm,身份证\u003d 6.2A
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IRF[International Rectifier] International Rectifier, Corp.
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FCA16N60N |
600V N-Channel MOSFET SupreMOS™; 3-TO-3PN 16 A, 600 V, 0.199 ohm, N-CHANNEL, Si, POWER, MOSFET N-Channel MOSFET 600V, 16A, 0.170W
|
Fairchild Semiconductor, Corp.
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FQI12N60C FQB12N60C FQB12N60CTM |
600V N-Channel MOSFET 12 A, 600 V, 0.65 ohm, N-CHANNEL, Si, POWER, MOSFET 600V N-Channel Advance QFET C-Series
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http:// FAIRCHILD SEMICONDUCTOR CORP Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
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IRFU1N60A IRFR1N60A IRFR1N60ATR IRFR1N60ATRL IRFR1 |
600V Single N-Channel HEXFET Power MOSFET in a D-Pak package 600V Single N-Channel HEXFET Power MOSFET in a I-Pak package SMPS MOSFET Power MOSFET(Vdss=600V, Rds(on)max=7.0ohm, Id=1.4A)
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IRF[International Rectifier]
|
STS1NK60Z 9448 S1NK60Z |
N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH Power MOSFET N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESHPower MOSFET N-CHANNEL 600V 13 OHM 0.25A SO-8 ZENER-PROTECTED SUPERMESH POWER MOSFET From old datasheet system N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH⑩ Power MOSFET N-CHANNEL 600V - 13W - 0.25A - SO-8 Zener-Protected SuperMESH?/a> Power MOSFET
|
意法半导 STMICROELECTRONICS[STMicroelectronics]
|
APT6030BN APT6033BN |
POWER MOS IV 600V 22.0A 0.33 Ohm / 600V 23.0A 0.30 Ohm N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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ADPOW[Advanced Power Technology]
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SI4860DY |
N-Channel MOSFET, 30V(D-S) , Reduced Qg, Fast-Switching N沟道MOSFET0V(D-S),Qg,快速开 N-Channel Reduced Qg, Fast Switching MOSFE
|
Vishay Intertechnology, Inc. Vishay Siliconix
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STB3NC60 STB3NC60T4 STB3NC60-1 |
TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-262AA TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 3A I(D) | TO-263AB N - CHANNEL 600V - 3.3Ohm -3A-D 2 PAK/I 2 PAK PowerMESH II MOSFET N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET
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SGS Thomson Microelectronics STMicroelectronics 意法半导
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STB9NK60ZD06 STP9NK60ZD STB9NK60ZD STF9NK60ZD |
N-channel 600V - 0.85Ω - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh Power MOSFET N-channel 600V - 0.85楼? - 7A - D2PAK/TO-220FP/TO-220 SuperFREDMesh垄芒 Power MOSFET
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STMicroelectronics
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