PART |
Description |
Maker |
HYB18T256400AC-3.7 HYB18T256400AC-5 HYB18T256160AC |
DDR2 SDRAM Components - 256Mb (64Mx4) DDR2 533 (4-4-4) Available 3Q04 DDR2 SDRAM Components - 256Mb (64Mx4) DDR2 400 (3-3-3) Available 3Q04 DDR2 SDRAM Components - 256Mb (16Mx16) DDR2 533 (4-4-4) Available 3Q04 DDR2 SDRAM Components - 256Mb (16Mx16) DDR2 400 (3-3-3) Available 3Q04 DDR2 SDRAM Components - 256Mb (32Mx8) DDR2 533 (4-4-4) Available 3Q04 DDR2 SDRAM Components - 256Mb (32Mx8) DDR2 400 (3-3-3) Available 3Q04
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Infineon
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MR18R162GAF0 MR16R162GAF0 MR18R1624AF0 MR18R1622AF |
64M X 16 RAMBUS MODULE, DMA184 TVS 500W 6.5V BIDIRECT DO-15 6Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V 16Mx16显示)2/8/16)件RIMM的模块,基于256Mb阿芯片,32秒银行,16K/32ms参考,.5V (MR18R1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (MR1xR1622(4/8/G)AF0) (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die (16Mx16)x2(4/8/16)pcs RIMM Module based on 256Mb A-die, 32s banks,16K/32ms Ref, 2.5V
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
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HYB25D256800BTL-5A HYB25D256800BT HYB25D256800BT-5 |
DDR SDRAM Components - 256Mbit (32Mx8) DDR400 (3-3-3) DDR SDRAM Components - 256Mbit (16Mx16) DDR400 256MBit Double Data Rata SDRAM
|
INFINEON[Infineon Technologies AG]
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HY5DS573222F-36 HY5DS573222F-28 HY5DS573222FP-4 HY |
256M(8Mx32) GDDR SDRAM 8M X 32 DDR DRAM, 0.6 ns, PBGA144
|
Hynix Semiconductor Inc. Hynix Semiconductor, Inc.
|
HDD64M72D18RW-13A HDD64M72D18RPW HDD64M72D18RWP-10 |
DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块512Mbyte4Mx72bit),2Mx8BanksK的参考依据。,184Pin与锁相环内存 DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM内存模块512Mbyte64Mx72bit),2Mx8BanksK的参考依据。,184Pin与锁相环内存
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
MR18R162CGMN0 |
(16Mx16)*12(16)pcs RIMMModule based on 256Mb M-die, 32s banks,16K/32ms Ref, 2.5V Data Sheet
|
Samsung Electronic
|
K4H560838E-TC/LB0 K4H560838E-TC/LA2 K4H560838E-TC/ |
DDR SDRAM 256Mb E-die (x4, x8) 256Mb的DDR SDRAM的电子芯片(了x4,x8 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-PDIP -40 to 125 256Mb E-die DDR SDRAM Specification 66 TSOP-II Dual Micropower Precision Low-Voltage Operational Amplifier 8-SOIC -55 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PLCC 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-PDIP DDR SDRAM 256Mb E-die (x4, x8)
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Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
|
HDD32M72D9RPW-13A HDD32M72D9RPW-13B |
DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register DDR SDRAM Module 256Mbyte (32Mx72bit), based on 32Mx8, 4Banks 8K Ref., 184Pin-DIMM with PLL & Register 256MB的DDR SDRAM内存模块2Mx72bit),基于2Mx8Banks 8K的参考。,184Pin - DIMM内存的锁相环
|
Hanbit Electronics Co.,Ltd. Hanbit Electronics Co., Ltd.
|
W3EG6433S-JD3 W3EG6433S265D3 |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
WV3EG216M64STSU335D4NG |
256MB - 2x16Mx64 DDR SDRAM UNBUFFERED 256MB 2x16Mx64 DDR内存缓冲
|
Electronic Theatre Controls, Inc.
|
HDD64M72D18W-13A HDD64M72D18W-13B HDD64M72D18W-10A |
DDR SDRAM Module 512Mbyte (64Mx72bit), based on 32Mx8, 4Banks, 8K Ref., with 184Pin-DIMM
|
HANBIT[Hanbit Electronics Co.,Ltd]
|
HYMD232646C8J-J HYMD232646C8J-D43 |
32M X 64 DDR DRAM MODULE, 0.7 ns, DMA184 DIMM-184 DDR SDRAM - Unbuffered DIMM 256MB
|
Hynix Semiconductor, Inc.
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