| PART |
Description |
Maker |
| UPD4416001G5-A17-9JF UPD4416001G5-A15-9JF UPD44160 |
16M X 1 STANDARD SRAM, 15 ns, PDSO54
16M-BIT CMOS FAST SRAM 16M-WORD BY 1-BIT 1,600位CMOS快速静态存储器1,600 - Word1
|
NEC, Corp.
NEC Corp.
NEC[NEC]
|
| LRS1329 |
Stacked Chip 16M Flash and 2M SRAM 1,600闪存芯片堆叠以及2M SRAM
|
Sharp, Corp.
|
| LRS1329 |
Stacked Chip 16M Flash and 2M SRAM
|
Sharp Electrionic Components
|
| SST34HF164X |
(SST34HF162x / SST34HF164x) 16M-bit Concurrent SuperFlash SRAM
|
Silicon Storage Technology
|
| SST34HF1621A |
(SST34HF1621A / SST34HF1641A / SST34HF1681) 16M-bit Concurrent SuperFlash SRAM Combo Memory
|
Silicon Storage Technology
|
| AT45DB161B |
16M bit, 2.7-Volt Only Serial-Interface Flash with Two 528-Byte SRAM Buffers
|
Atmel
|
| GS81302R08E-200I GS81302R09E-200IT GS81302R09E-167 |
16M X 8 DDR SRAM, 0.45 ns, PBGA165
4M X 9 DDR SRAM, 0.45 ns, PBGA165
16M X 9 DDR SRAM, 0.5 ns, PBGA165
4M X 9 DDR SRAM, 0.5 ns, PBGA165
|
GSI TECHNOLOGY
|
| MB84VD21081-85-PBS MB84VD21081-85-PTS MB84VD21091- |
16M (x8/x16) FLASH MEMORY & 2M (x8/x16) STATIC RAM
Stacked MCP (multi-chip package) flash memory & SRAM 16M(x8/x16) flash memory & 2M(x8/x16) static RAM
|
Fujitsu Microelectronics
|
| MC-4516CC726 |
16M-Word By 72-BIT Dynamic RAM Module(16M×72位动态RAM模块)
|
NEC Corp.
|
| HYB3164405TL-50 HYB3164405T-50 SIEMENSAG-HYB316540 |
16M x 4-Bit Dynamic RAM 16M X 4 EDO DRAM, 50 ns, PDSO34
|
SIEMENS AG
|
| UPD4416004 UPD4416004G5-A17-9JF UPD4416004G5-A15-9 |
16M-BIT CMOS FAST SRAM 4M-WORD BY 4-BIT
|
NEC Corp.
NEC[NEC]
|
