| PART |
Description |
Maker |
| IRG4IBC20W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220 FullPak package
INSULATED GATE BIPOLAR TRANSISTOR
|
IRF[International Rectifier]
|
| STGP7NB60 STGP7NB60H 6201 |
From old datasheet system
N-CHANNEL 7A - 600V TO-220 PowerMESH TM IGBT
N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT
N-CHANNEL 7A - 600V TO-220 PowerMESH IGBT N沟道A - 600V 220 PowerMESH IGBT
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
STMicroelectronics N.V.
|
| 8ETH06 8ETH06-1 8ETH06F 8ETH06FP 8ETH06S |
600V 8A HyperFast Discrete Diode in a D2-Pak (UltraFast) package
600V 8A Hyperfast Discrete Diode in a TO-220 FullPack package
600V 8A HyperFast Discrete Diode in a TO-262 package
Hyperfast Rectifier
|
IRF[International Rectifier]
|
| STGP7NC60HD STGB7NC60HD STGB7NC60HDT4 STGF7NC60HD |
N-CHANNEL 14A - 600V - TO-220/TO-220FP/DPAK Very Fast PowerMESH IGBT N沟道14A - 600V TO-220/TO-220FP/DPAK非常IGBT的快速PowerMESH
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| MG200H1AL2 MG200H1FL1A |
V(cbo): 600V; V(ceo): 600V; V(ebo): 6V; 800W; IGBT module
(DISCRETE/OPTO)
|
Toshiba Semiconductor
|
| STGP12NB60HD |
N-CHANNEL 12A - 600V TO-220 PowerMESH??IGBT
N-CHANNEL 12A - 600V TO-220 PowerMESH⑩ IGBT
N-CHANNEL 12A - 600V TO-220 PowerMESH IGBT
N-CHANNEL 12A - 600V TO-220 PowerMESH?/a> IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| STGP20NB60H 6203 |
From old datasheet system
N-CHANNEL 20A - 600V TO-220 PowerMESH TM IGBT
N-CHANNEL 20A - 600V TO-220 PowerMESH IGBT
|
STMICROELECTRONICS[STMicroelectronics]
|
| IRG4BC30W |
600V Warp 60-150 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)max.=2.70V, @Vge=15V, Ic=12A)
|
IRF[International Rectifier]
|
| STGB10NB60S STGB10NB60ST4 STGP10NB60S_05 GB10NB60S |
N-CHANNEL 10A - 600V - TO-220/TO-220FP/D2PAK PowerMESH TM IGBT
N-CHANNEL 10A 600V TO-220/TP-220FP/DPAK PowerMESH"IGBT
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
