PART |
Description |
Maker |
SAK-C164CI-8EM SAF-C164CI-8E25MD-STEP SAF-C164CI-8 |
Compact Microcontrollers for Motor-Drive applications 16-Bit Microcontrollers - 64 K OTP, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 25 MHz 16-Bit Microcontrollers - 64 K OTP, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz 16-Bit Microcontrollers - 64 K OTP, 2 K RAM, CAN, Drive Control Unit, 20 MHz 16-Bit Microcontrollers - 64 K ROM, 4 K RAM, Drive Control Unit, enh. Power Saving features, 20 MHz 16-Bit Microcontrollers - 64 K ROM, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz 16-Bit Microcontrollers - ROMless, 4 K RAM, CAN, Drive Control Unit, enh. Power Saving features, 20 MHz 16-Bit Microcontrollers - 64 K ROM, 4 K RAM, CAN, enh. Power Saving features, 20 MHz 48Kbyte ROM; 20 (25MHz) MHz; V(dd): -0.5to 6.5V; V(in): -0.5 to 0.5V; 10mA; 1.5W; 16-bit single chip microcontoller
|
Infineon
|
AFT26H250W03SR6 AFT26H250W03S-24S |
RF Power LDMOS Transistors
|
NXP Semiconductors
|
RC1206FR--108R2L B41694A5477Q7 C5750X7S2A106M AFT2 |
RF Power LDMOS Transistors
|
Freescale Semiconductor, Inc Freescale Semiconductor...
|
UT--141C--25 CRCW120610R0JNEA MCGPR63V477M13X26--R |
RF Power LDMOS Transistors High Ruggedness N--Channel Enhancement--Mode Lateral MOSFETs
|
Freescale Semiconductor, Inc
|
BLF6G22-180RN BLF6G22LS-180RN |
180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Power LDMOS transistor S BAND, Si, N-CHANNEL, RF POWER, MOSFET Power LDMOS transistor BLF6G22-180RN<SOT502A (LDMOST)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,; Power LDMOS transistor BLF6G22-180RN<SOT502A (SOT502A)|<<http://www.nxp.com/packages/SOT502A.html<1<Always Pb-free,;
|
NXP Semiconductors N.V.
|
BLF4G20LS-110B |
From old datasheet system UHF power LDMOS transistor 110 W LDMOS power transistor for base station applications at frequencies
|
Philips Semiconductors NXP Semiconductors N.V.
|
MHPA18010 |
MHPA18010 1805-1880 MHz, 10 W, 24.5 dB RF High Power LDMOS Amplifier CDMA BAND RF LINEAR LDMOS AMPLIFIER
|
MOTOROLA[Motorola, Inc]
|
BLF7G27LS-100 BLF7G27L-100 |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz.
|
NXP Semiconductors N.V.
|
BLF7G22LS-100P |
Power LDMOS transistor 100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
|
NXP Semiconductors N.V.
|
MW4IC2020 MW4IC2020D MW4IC2020GMBR1 MW4IC2020MBR1 |
GSM/GSM EDGE, CDMA 1.805–1.99 GHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifier MW4IC2020MBR1, MW4IC2020GMBR1 GSM/GSM EDGE, CDMA, 1805-1990 MHz, 20 W, 26 V RF LDMOS Wideband Integrated Power Amplifiers RF LDMOS Wideband Integrated Power Amplifiers
|
Freescale (Motorola) MOTOROLA[Motorola, Inc]
|
BLF7G27L-90P BLF7G27LS-90P |
90 W LDMOS power transistor for base station applications at frequencies from 2500 MHz to 2700 MHz. Power LDMOS transistor
|
NXP Semiconductors N.V.
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