| PART |
Description |
Maker |
| HAT1023R-EL-E HAT1023R |
7 A, 20 V, 0.06 ohm, P-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon P Channel Power MOSFET High Speed Power Switching
|
Renesas Electronics, Corp.
Renesas Electronics Corporation
|
| 2SK947 2SK947-MR |
N-CHANNLEL SILICON POWER MOSFET 12 A, 250 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-CHANNLEL SILICON POWER MOSFET - CHANNLEL硅功率MOSFET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| HAT2058R-EL-E HAT2058RJ-EL-E HAT2058R05 |
4 A, 100 V, 0.18 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| HAT2028R-EL-E HAT2028RJ-EL-E HAT2028R-15 |
4 A, 60 V, 0.16 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.95 X 4.90 MM, PLASTIC, FP-8DAV, SOP-8
Silicon N Channel Power MOS FET High Speed Power Switching
|
Analog Devices, Inc.
Renesas Electronics Corporation
|
| 2SK3512-01L 2SK3512-S 2SK3512-SJ 2SK3512 2SK3512-0 |
N-CHANNEL SILICON POWER MOSFET N沟道功率MOSFET
MOSFETs 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
|
FUJI ELECTRIC HOLDINGS CO., LTD.
FUJI[Fuji Electric]
|
| RJM0306JSP-00-J0 RJM0306JSP10 |
Silicon N / P Channel Power MOS FET High Speed Power Switching
3.5 A, 30 V, 4 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET 4.90 X 3.95 MM, SOP-8
|
Renesas Electronics Corporation
|
| 2SK1450 |
20 A, 450 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB
N-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications
|
Sanyo
|
| 2SK3610-01 |
N-CHANNEL SILICON POWER MOSFET
10 A, 250 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
|
FUJI ELECTRIC CO LTD
|
| IRFW510A IRFI510ATU IRFW510ATM IRFI510A |
N-CHANNEL POWER MOSFET
100V N-Channel A-FET / Substitute of IRFI510
Advanced Power MOSFET 5.6 A, 100 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
|
Fairchild Semiconductor, Corp.
|
| RJK0206DPA RJK0206DPA-00-J53 |
70 A, 25 V, 0.0025 ohm, N-CHANNEL, Si, POWER, MOSFET HALOGEN AND LEAD FREE, WPAK(2), 8 PIN
Silicon N Channel Power MOS FET with Schottky Barrier Diode Power Switching
|
Renesas Electronics Corporation
|
|
