| PART |
Description |
Maker |
| 10DRA40 |
FRD - 1A 400V 120ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| 10DRA60 |
FRD - 1A 600A 120ns 1 A, 600 V, SILICON, SIGNAL DIODE
|
Nihon Inter Electronics, Corp.
NIEC[Nihon Inter Electronics Corporation]
|
| 10ERB60 |
Long Life Miniature Relay, PCB Type
FRD - 1A 600V 120ns
|
NIEC[Nihon Inter Electronics Corporation]
|
| PYA28HC256 PYA28HC256-12CWM PYA28HC256-12CWMB PYA2 |
Access Times of 70, 90 and 120ns Software Data Protection
|
Pyramid Semiconductor C...
|
| X9279TB X9279TBI X9279TB-2.7 |
Single Digitally-Controlled (XDCP) Potentiometer 单数字控制（数字电位器）电位
IC,FLASH MEMORY,64 MB,120NS,3.0V,48 TSOP
AM29DL800 FLASH MEM 8MB 70NS TSOP-48
|
Xicor Inc.
|
| MK4027J-2 MK4027J-3 MK4027N-2 MK4027N-3 MK4027-3 M |
4096x1-bit dynamic RAM, 120ns acces time. 320ns cycle.
4096 X 1 BIT DYNAMIC RAM 4096 × 1位动态随机存储器
LED YEL RECT MODULAR VERT
From old datasheet system
|
Mostek
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| M48Z02-120PC1 M48Z02-120PC6 M48Z12-120PC1 M48Z12-2 |
CMOS 2K x 8 zeropower SRAM, 120ns
CMOS 2K x 8 zeropower SRAM, 200ns
|
SGS Thomson Microelectronics
|
| HM628128FP-10 HM628128FP-12 HM628128FP-7 HM628128F |
100ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
120ns; V(cc): -0.5 to 7.0V; 1W; 131072-word x 8-bit high speed CMOS static RAM
|
HITACHI[Hitachi Semiconductor]
|
| AM-542MC AM-542MM AM-542MR AM-543MC |
250NS, TSOP, COM TEMP(FLASH)
250NS, TSOP, IND TEMP(FLASH)
150NS, PLCC, COM TEMP(FLASH)
120NS, PLCC, IND TEMP(FLASH) 仪表放大器，数字可编
|
Sanyo Electric Co., Ltd.
|
| HM514258AZP-8 HM514258AZP-12 |
80ns; V(cc/t): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
120ns; V(cc/t): -1.0 to 7.0V; 50mA; 1W; 262,144-word x 4-bit CMOS dynamic RAM
|
Hitachi Semiconductor
|
