| PART |
Description |
Maker |
| MRF160 |
POWE FIELD EFFECT TRANSISTOR
|
Advanced Semiconductor
|
| QM50TB-24 |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM50TX-HB |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM15TB-2H |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM30TB-24B |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM20TD-H |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM50CY-H |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM20TG-9B |
TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM30HY-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM30DY-HB |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| QM15DX-2H |
MITSUBISHI TRANSISTOR MODULES MEDIUM POWER SWITCHING USE INSULATED TYPE
|
Mitsubishi Electric Corporation
|
| RM20TPM-H02 RM20TPM-H RM20TPM-M |
Integrated Gate Bipolar Transistor (IGBT) Modules: 250V
Rectifier Diodes, 800V
MEDIUM POWER GENERAL USE INSULATED TYPE
|
Mitsubishi Electric Corporation
Mitsubishi Electric Semiconductor
|
