| PART |
Description |
Maker |
| M59PW064 M59P064110N1T M59P064100M1T M59P064100N1T |
64 Mbit (4Mb x16, Uniform Block) 3V Supply LightFlash Memory 64兆位Mb的x16插槽，统一座）3V电源LightFlash记忆
64 Mbit (4Mb x16, Uniform Block) 3V Supply LightFlash Memory
|
STMicroelectronics N.V.
STMICROELECTRONICS[STMicroelectronics]
|
| M29KDCL3-32T M29KW064E90N1T M29KW064E90ZA1T |
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash Memory
64 Mbit 4Mb x16, Uniform Block 3V Supply LightFlash?Memory
|
STMicroelectronics
|
| M58LW064D110N6P |
64 MBIT(8MB X8, 4MB X16, UNIFORM BLOCK)3V SUPPLY FLASH MEMORY
|
ST Microelectronics
|
| M58LW064D |
64 Mbit (8Mb x8 / 4Mb x16 / Uniform Block) 3V Supply Flash Memory
|
ST Microelectronics
|
| M58LV064B150ZA6T M58LV064A M58LV064A150N1T M58LV06 |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories
|
STMICROELECTRONICS[STMicroelectronics]
|
| M58LV064A150ZA1T M58LV064A150ZA6T M58LV064B150N1T |
64 Mbit 4Mb x16 or 2Mb x32, Uniform Block, Burst 3V Supply Flash Memories 64兆位4Mb的x16或功能的2Mb X32号，统一座，突发3V电源闪存
|
STMicroelectronics N.V.
|
| M36W0R6030T0ZAQ M36W0R6030B0ZAQ M36W0R6030B0 M36W0 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 8 Mbit (512Kb x16) SRAM, Multi-Chip Package
|
http://
STMicroelectronics
|
| M36W0R6050B0ZAQT |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 32 Mbit (2Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics
|
| M29KW032E90ZA6T M29KDCL3-32T M29KW032E M29KW032E11 |
From old datasheet system
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash⑩ Memory
32 Mbit 2Mb x16 / Uniform Block 3V Supply LightFlash Memory
32 MBIT (2MB X16, UNIFORM BLOCK)3V SUPPLY LIGHTFLASHMEMORY
32 Mbit 2Mb x16, Uniform Block 3V Supply LightFlash Memory
|
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M27V320-150N6 M27V320 M27V320-100M1 M27V320-100M6 |
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-SSOP -40 to 85 32兆位4Mb的x8或检察官办公室的2Mb x16存储
2.5-V/3.3-V 20-Bit Buffers/Drivers With 3-State Outputs 56-TVSOP -40 to 85
32 Mbit 4Mb x8 or 2Mb x16 OTP EPROM
32 MBIT (4MB X8 OR 2MB X16) OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29W641DH12ZA1E M29W641DH12ZA1F M29W641DH12ZA6E M2 |
4M X 16 FLASH 3V PROM, 70 ns, PDSO48
Low-Power Single Bus Buffer Gate with 3-State Output 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一3V电源快闪记忆
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一3V电源快闪记忆
64 Mbit 4Mb x16, Uniform Block 3V Supply Flash Memory 64兆位4Mb的x16插槽，统一V电源快闪记忆
Low-Power Single 2-Input Positive-AND Gate 5-SC70 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆
Low-Power Single Schmitt-Trigger Buffer 5-SOT-23 -40 to 85 64兆位4Mb的x16插槽，统一V电源快闪记忆
Shielded Multiconductor Cable; Number of Conductors:25; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Shielded Multiconductor Cable; Number of Conductors:15; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Leaded Process Compatible:Yes; Conductor Material:Copper RoHS Compliant: Yes
Low-Power Single 2-Input Positive-AND Gate 5-SOT-23 -40 to 85
Shielded Multiconductor Cable; Number of Conductors:10; Conductor Size AWG:24; No. Strands x Strand Size:7 x 32; Jacket Material:Polyvinylchloride (PVC); Shielding Material:Aluminum Foil/Polyester Tape/Tinned Copper Braid RoHS Compliant: Yes
64 Mbit 4Mb x16 / Uniform Block 3V Supply Flash Memory
Low-Power Single Buffer/Driver with Open-Drain Outputs 5-DSBGA -40 to 85
|
NUMONYX
STMicroelectronics N.V.
意法半导
ST Microelectronics
|
