| PART |
Description |
Maker |
| RFK35N10 RFK35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS, N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| RFH35N10 RFH35N08 |
POWER MOS FIELD - EFFECT TRANSISTORS N - CHANNEL ENHANCEMENT - MODE POWER FIELD - EFFECT TRANSISTORS
|
List of Unclassifed Manufacturers
ETC[ETC]
|
| SSM5P05FU |
Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
Toshiba Semiconductor
|
| FDS8926A |
Dual N-Channel Enhancement Mode Field Effect Transistor 5.5 A, 30 V, 0.03 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| UPA1811 UPA1811GR-9JG D11820EJ1V0DS00 |
4 A, 20 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET POWER, TSSOP-8
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
From old datasheet system
|
NEC, Corp.
NEC[NEC]
|
| DMN3150L-7 |
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
3.8 A, 30 V, 0.054 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Diodes Inc.
Diodes Incorporated
|
| H03N60 H03N60F H03N60E |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelect...
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
|
| TO-263 |
N-Channel Power Field Effect Transistor
|
Hi-Sincerity Mocroelectronics
|
| H02N60SJ H02N60S H02N60SE H02N60SF H02N60SI |
N-Channel Power Field Effect Transistor
|
HSMC CORP.
HSMC[Hi-Sincerity Mocroelectronics]
Hi-Sincerity Mocroelectronics Corp.
|
| PHP96NQ03LT PHD96NQ03LT PHB96NQ03LT |
N-channel enhancement mode field-effect transistor 75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| NDB6020PNL |
P-Channel Logic Level Enhancement Mode Field Effect Transistor 24 A, 20 V, 0.05 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB
|
Fairchild Semiconductor, Corp.
|
