| PART |
Description |
Maker |
| APT8015JVFR APT8015 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 800V 44A 0.150 Ohm
|
http://
ADPOW[Advanced Power Technology]
|
| APT8030B2VR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8030LVR |
POWER MOS V 800V 27A 0.300 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8056BVFR |
POWER MOS V 800V 16A 0.560 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
|
ADPOW[Advanced Power Technology]
|
| APT8075 APT8075BN APT8090BN |
POWER MOS V 800V 13.0A 0.75 Ohm / 800V 12.0A 0.90 Ohm
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology]
|
| SPW17N80C3 |
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
Cool MOS⑩ Power Transistor
Cool MOS??Power Transistor
Cool MOS Power Transistor
Cool MOS?/a> Power Transistor
|
INFINEON[Infineon Technologies AG]
|
| STH9NA80 STH9NA80FI STW9NA80 |
N - CHANNEL 800V - 0.85ohm - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
N-Channel 800V-0.85Ω-9.1A - TO-247/ISOWATT218 Fast Power MOS Transistor(Ｎ沟道快速功率ＭＯＳ晶体
|
SGS Thomson Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
ST Microelectronics
|
| SPP04N80C3 SPA04N80C3 |
Cool MOS?/a> Power Transistor
Cool MOS⑩ Power Transistor
Cool MOS Power Transistor
for lowest Conduction Losses & fastest SwitchingPlease note: Infineon has changed the CoolMOS 800V C2 marking to C3. 800V C2 ...
|
INFINEON[Infineon Technologies AG]
|
| STW9NA80 STH9NA80FI |
N - CHANNEL 800V - 0.85Q - 9.1A - TO-247/ISOWATT218 FAST POWER MOS TRANSISTOR
|
New Jersey Semi-Conductor P...
New Jersey Semi-Conduct...
|
| IRFPE40 IRFPE40PBF |
800V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
Power MOSFET(Vdss=800V, Rds(on)=2.0ohm, Id=5.4A)
|
International Rectifier
|
| IRFBE20 |
800V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=800V, Rds(on)=6.5ohm, Id=1.8A)
Power MOSFET(Vdss=800V/ Rds(on)=6.5ohm/ Id=1.8A)
|
IRF[International Rectifier]
|
