PART |
Description |
Maker |
M36WT864TF 8967 M36WV8B85ZA6T M36WT864 M36WT864B10 |
From old datasheet system 64 Mbit 4Mb x16, Multiple Bank, Burst Flash Memory and 8 Mbit 512K x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
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SST39LF010-45-4C-B3HE SST39VF010-45-4C-B3KE SST39L |
512K X 8 FLASH 2.7V PROM, 70 ns, PBGA48 512K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 128K X 8 FLASH 2.7V PROM, 70 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 3V PROM, 45 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 64K X 8 FLASH 3V PROM, 45 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 3V PROM, 55 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 512K X 8 FLASH 3V PROM, 55 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PQCC32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 55 ns, PDSO32 64 Mbit (x16) Multi-Purpose Flash Plus 256K X 8 FLASH 3V PROM, 45 ns, PBGA48 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit (x8) Multi-Purpose Flash
|
SILICON STORAGE TECHNOLOGY INC Silicon Storage Technology, Inc. Microchip Technology, Inc. Microchip Technology Inc. Silicon Storage Technol...
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SST39LF016 SST39LF016-90-4I-EI SST39VF016-90-4I-EI |
(SST39VF080 / SST39VF016 / SST39LF080 / SST39LF016) 8 Mbit / 16 Mbit (x8) Multi-Purpose Flash 7.6 mm(0.3 inch) Micro Bright Seven Segment Displays CONNECTOR ACCESSORY LED Light Bars D52 - BACKSHELL ENVIRON EMI-RFI STRT MIL 2M X 8 FLASH 2.7V PROM, 70 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 3V PROM, 55 ns, PBGA48 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 90 ns, PDSO40 64 Mbit (x16) Multi-Purpose Flash Plus 64兆位(x16)的多功能闪存加 64 Mbit (x16) Multi-Purpose Flash Plus 2M X 8 FLASH 2.7V PROM, 70 ns, PDSO40
|
Silicon Storage Technology, Inc. SILICON STORAGE TECHNOLOGY INC
|
M68AW512M |
8 MBIT (512K X16) 3.0V ASYNCHRONOUS SRAM
|
STMicroelectronics
|
M68AR512DL |
8 MBIT (512K X16) 1.8V ASYNCHRONOUS SRAM
|
SGS Thomson Microelectronics
|
CY7C1461AV33-100AXC CY7C1463AV33-100AXC CY7C1461AV |
36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL垄芒 Architecture 36-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM with NoBL Architecture(带NoBL结构6-Mbit (1M x 36/2 M x 18/512K x 72) Flow-Through SRAM) 36兆位米x 36 / 2 M中的x 18/512K × 72)流体系结构,通过与总线延迟(带总线延迟结构的的36 - Mbit通过的SRAM100万x 36 / 2 M中的x 18/512K × 72)流的SRAM
|
Cypress Semiconductor Corp.
|
M36W0R6040T0 M36W0R6040B0ZAQF M36W0R6040T0ZAQF M36 |
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
|
ST Microelectronics STMicroelectronics
|
M36W432BG M36W432BG70ZA1T M36W432BG70ZA6T M36W432B |
32 Mbit 2Mb x16, Boot Block Flash Memory and 4 Mbit 256Kb x16 SRAM, Multiple Memory Product
|
STMICROELECTRONICS[STMicroelectronics]
|
M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM 512K X 8 UVPROM, 100 ns, CDIP40 4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储 256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
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SGS Thomson Microelectronics STMicroelectronics N.V. 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
|
SST39LF400A SST39LF200A |
(SST39xF200A/400A/800A) 2 Mbit / 4 Mbit / 8 Mbit (x16) Multi-Purpose Flash
|
Silicon Storage Technology
|