| PART |
Description |
Maker |
| GB25RF120K |
1200V 25A Low Vce Non Punch Through IGBT in a Econo2 PIM Package
|
International Rectifier
|
| 20ETS12STRR 20ETS08 20ETS08S 20ETS08STRL 20ETS08ST |
INPUT RECTIFIER DIODE
1200V 20A Std. Recovery Diode in a D2-Pakpackage
1200V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package
20ETS12/20ETS12S
800V 20A Std. Recovery Diode in a D2-Pakpackage
800V 20A Std. Recovery Diode in a TO-220AC (2-Pin)package
From old datasheet system
SURFACE MOUNTABLE INPUT RECTIFIER DIODE
|
InternationalRectifier
IRF[International Rectifier]
|
| 907-0010 912-0120 914-0040 914-0070 914-0140 912-0 |
PUNCH&DIE SET 3-12MM
PUNCH&DIE 10.0MM CIRCULAR
PUNCH&DIE 16.5MM CIRCULAR
PUNCH&DIE 25.0MM CIRCULAR
PUNCH&DIE 12.0MM CIRCULAR
PUNCH&DIE 9.0MM CIRCULAR
PUNCH&DIE 20.0MM CIRCULAR
PUNCH&DIE 12.5MM CIRCULAR
STRIPPER 37.0 X 13.7 D CON
STRIPPER 31.75MM DIAMETER 低产31.75MM直径
LOUVRE TOOL 卢浮宫工
PUNCH&DIE 10.0MM CIRCULAR
STRIPPER 67.2 X 16.5 D CON
|
Peregrine Semiconductor, Corp.
Molex, Inc.
|
| IRG4PH30 IRG4PH30K |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=3.10V, @Vge=15V, Ic=10A) 绝缘栅双极晶体管（VCES和\u003d 1200伏，的Vce（on）典\u003d 3.10V，@和VGE \u003d 15V的，集成电路\u003d 10A条）
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
|
International Rectifier, Corp.
|
| RJH1CM6DPQ-E013 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| RJH1CD5DPQ-E0 |
1200V - 20A - IGBT Application: Inverter
|
Renesas Electronics Corporation
|
| FGA20S120M |
1200V, 20A, Shorted-anode IGBT
|
Fairchild Semiconductor
|
| NGTB20N120L |
IGBT 1200V 20A FS1 Gen Mkt
|
ON Semiconductor
|
| IRG4PH40K |
1200V UltraFast 4-20 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, Vce(on)typ.=2.74V, @Vge=15V, Ic=15A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
|
IRF[International Rectifier]
|
| IRGPH40S |
INSULATED GATE BIPOLAR TRANSISTOR(Vces=1200V, @Vge=15V, Ic=20A)
|
IRF[International Rectifier]
|
| 2SD1615A |
World Standard Miniature Package. Low VCE(sat) VCE(sat) = 0.15 V
|
TY Semiconductor Co., Ltd
|
| ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
