PART |
Description |
Maker |
IRF450 IRF451 IRF452 IRF252 IRF250 IRF251 |
N-CHANNE POWER MOSFETS
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New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P... New Jersey Semi-Conduct...
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HUF76407D3 HUF76407D3S HUF76407D3ST |
11A, 60V, 0.107 Ohm, N-Channel, Logic Level UltraFETPower MOSFET 11A,60V, 0.107 Ohm, N-Channe, Logic Level UltraFET Power MOSFET
|
Fairchild Semiconductor
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IRFIZ34N-004 IRFIZ46N-002 IRFIZ46N-029 IRFIZ46N-02 |
19 A, 55 V, 0.04 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 31 A, 55 V, 0.02 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 13 A, 55 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 28 A, 55 V, 0.024 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 2.1 A, 250 V, 2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB TO-220, 3 PIN 21 A, 60 V, 0.042 ohm, N-CHANNE 28 A, 100 V, 0.025 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 56 A, 55 V, 0.008 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB 4.5 A, 100 V, 0.54 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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Bourns, Inc. JST Mfg. Co., Ltd. Vishay Intertechnology, Inc. Austin Semiconductor, Inc
|
NIMD6302R2 |
HDPlus Dual N-Channel Self-Protected Field Effect Transistor with 1:200 Current Sense FET HDPlus Dual N-Channe Self-protected Field Effect Transistors with 1:200 Current Mirror FET
|
ONSEMI[ON Semiconductor]
|
STM322 STM420 STM423 STM323 STM421 STM353 STM430 S |
TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 2.8A I(D) | TO-204AA USB Port Lithium-Ion/Polymer Battery Charger 2A Lithium-Ion/Polymer Battery Charger TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 13A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 4.5A I(D) | TO-204AA TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 3.3A I(D) | TO-204AA NanoPower Voltage Detectors TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 2.2A I(D) | TO-204AA 1A Linear Li-Ion Battery Charger in 2.2x2.2mm STDFN TRANSISTOR | MOSFET | N-CHANNEL | 400V V(BR)DSS | 11A I(D) | TO-3 晶体管| MOSFET的| N沟道| 400V五(巴西)直| 11A条(丁)| TRANSISTOR | MOSFET | N-CHANNEL | 350V V(BR)DSS | 2.8A I(D) | TO-204AA 晶体管| MOSFET的| N沟道| 350V五(巴西)直| 2.8AI(四)|04AA
|
Atmel, Corp.
|
STB6NA80 4233 STB6NA80-1 STB6NA80T4 |
TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-263AB TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 5.7A I(D) | TO-262VAR N-CHANNEL Power MOSFET N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR From old datasheet system
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
|
SST5460 SST5462 SST5461 2N5462 2N5460 2N5461 |
P-CHANNEL JFETS MOSFET, N SO-8MOSFET, N SO-8; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:30V; Case style:SO-8; Current, Id cont:6.2A; Current, Idm pulse:30A; Power, Pd:1.5W; Resistance, Rds on:0.024R; SMD:1; Charge, gate
|
VISAY[Vishay Siliconix] Vishay Intertechnology,Inc.
|
OM6414SP3 OM6415SP3 OM6413SP3 OM6416SP3 |
TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 200V V(BR)DSS | 4A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 200伏五(巴西)直| 4A条(丁) TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 400V V(BR)DSS | 2.5A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 400V五(巴西)直| 2.5AI(四 TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 100V V(BR)DSS | 6A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 100V的五(巴西)直| 6A条(丁) TRANSISTOR | MOSFET POWER MODULE | 3-PH BRIDGE | 500V V(BR)DSS | 2A I(D) 晶体管| MOSFET功率模块| 3 - PH值大桥| 500V五(巴西)直|甲(丁)
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Samwha Electronics International Rectifier, Corp.
|
STD1NA60 3633 STD1NA60-1 |
From old datasheet system N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 1.6A I(D) | TO-251 N-CHANNEL POWER MOSFET
|
http:// STMicroelectronics ST Microelectronics
|
NSFY30509 NSFY30942 |
TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 7A I(D) | TO-257 TRANSISTOR | MOSFET | N-CHANNEL | 900V V(BR)DSS | 3A I(D) | TO-257 晶体管| MOSFET的| N沟道| 900V五(巴西)直| 3A条(丁)|57
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Harwin PLC
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