PART |
Description |
Maker |
T48C510 |
4 KB Flash Memory, 2 Timer, SSI, 34 I/O Lines, V
|
Atmel
|
T48C893-V |
4 KB Flash Memory, 3 Timer, SSI, 16 I/O Lines, 64 Byte EEPROM, V
|
Atmel
|
E28F256J3C-110 GE28F256J3C-110 E28F256J3C-115 GE28 |
Intel StrataFlash Memory (J3) 英特StrataFlash存储器(J3 Aluminum Electrolytic Radial Lead Audio Grade Capacitor; Capacitance: 2200uF; Voltage: 10V; Case Size: 10x20 mm; Packaging: Bulk 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 16M X 16 FLASH 2.7V PROM, 125 ns, PDSO56 Intel StrataFlash Memory (J3) 英特尔StrataFlash存储器(J3 Intel StrataFlash Memory (J3) 8M X 16 FLASH 3V PROM, 150 ns, PDSO56 Intel StrataFlash Memory (J3) 8M X 16 FLASH 2.7V PROM, 120 ns, PBGA64 (TE28FxxxJ3C) Strata Flash Memory Strata Flash Memory / 256 Mbit
|
Intel, Corp. Intel Corp. http:// Intel Corporation
|
ATAM893-J |
4 KB Flash Memory, 3 Timer, SSI, 16 I/O Lines, 64 Byte EEPROM, VDD = 1.8 to 6.5 V, Tamb -40 to 125°C, ...
|
Atmel
|
W39V040FA W39V040FAT W39V040FAP W39V040FAQ |
3.3-Volt Flash NVM > Flash> FWH/LPC Flash Memory 512K X 8 CMOS FLASH MEMORY WITH FWH INERFACE
|
Winbond Electronics WINBOND[Winbond]
|
S29GL064A11TFIR20 S29GL064A11TFIR22 S29GL016A10FAI |
4M X 16 FLASH 3V PROM, 110 ns, PDSO56 LEAD FREE, MO-142EC, TSOP-56 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 1M X 16 FLASH 3V PROM, 100 ns, PBGA64 64 Megabit, 32 Megabit, and 16 Megabit 3.0-Volt only Page Mode Flash Memory Featuring 200 nm MirrorBit Process Technology 4M X 16 FLASH 3V PROM, 100 ns, PDSO56 2M X 16 FLASH 3V PROM, 100 ns, PBGA56 4M X 16 FLASH 3V PROM, 90 ns, PBGA64 Flash - NOR IC; Memory Type:FLASH; Access Time, Tacc:90ns; Page/Burst Read Access:25ns; Sector Type:Uniform; Package/Case:48-TSOP; Memory Configuration:64K x 16; Memory Size:64MB; NOR Flash Type:Page Mode Access RoHS Compliant: Yes 4M X 16 FLASH 3V PROM, 90 ns, PDSO48 4M X 16 FLASH 3V PROM, 100 ns, PDSO48
|
Spansion, Inc. SPANSION LLC
|
AT49LV1614AT AT49BV1614AT-90TI AT49BV1614A-90TI AT |
AT49BV1604A(T)/AT49BV/LV1614A(T) [Updated 3/02. 26 Pages] 16M bit . 2.7-Volt(BV)/ 3.0 - Volt (LV). Sectored Flash. Dual Plane. Top or Bottom Boot 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 1M X 16 FLASH 3V PROM, 70 ns, PDSO48 16-megabit 1M x 16/2M x 8 3-volt Only Flash Memory 16兆位100万x 16/2M × 8 3伏,只有闪存
|
Atmel Corp. Atmel, Corp.
|
CAT1026LI-45-GT3 CAT1026LI-45T3 CAT25C04LI-1.8TE13 |
Dual Voltage Supervisory Circuits with I2C Serial 2k-bit CMOS EEPROM 1K/2K/4K SPI Serial CMOS EEPROM 16K-Bit CMOS PARALLEL EEPROM 64K-Bit CMOS PARALLEL EEPROM 512K-Bit CMOS Flash Memory 32K/64K-Bit SPI Serial CMOS EEPROM 1 Megabit CMOS Flash Memory 512K-Bit CMOS PARALLEL EEPROM 1 Megabit CMOS Boot Block Flash Memory 256K-Bit CMOS PARALLEL EEPROM Supervisory Circuits with I2C Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer Precision, Adjustable Shunt Regulator Supervisory Circuits with I2C Serial Serial CMOS EEPROM, Precision Reset Controller and Watchdog Timer 128K/256K-Bit SPI Serial CMOS EEPROM 16K-Bit Serial EEPROM, Cascadable
|
CATALYST[Catalyst Semiconductor]
|
CAT28F002 CAT28F002PI-90BT CAT28F002NI-90BT CAT28F |
90ns 2M-bit CMOS boot block flash memory 150ns 2M-bit CMOS boot block flash memory 120ns 2M-bit CMOS boot block flash memory 2 Megabit CMOS Boot Block Flash Memory High Speed CMOS Logic 8-Stage Shift-and-Store Bus Register with 3-Stage Outputs 16-PDIP -55 to 125
|
http:// CATALYST[Catalyst Semiconductor]
|
EN29LV640U EN29LV640U-70R EN29LV641H EN29LV641H-70 |
64 Megabit (4096K x 16-bit) Flash Memory, CMOS 3.0 Volt-only Uniform Sector Flash Memory
|
Eon Silicon Solution Inc. ETC
|
CAT28F020HI-12T CAT28F020 CAT28F020HI-90T CAT28F02 |
2 Megabit CMOS Flash Memory 2 Mb CMOS Flash Memory 256K X 8 FLASH 12V PROM, 90 ns, PDSO32
|
ON Semiconductor
|