| PART |
Description |
Maker |
| GD511 |
SURFACE MOUNT,SWITCHING DIODE
The GD511 is designed for ultra high speed switching application, low forward voltage and fast reverse recovery time
|
GTM CORPORATION
E-Tech Electronics LTD
|
| 2SJ505 2SJ505L 2SJ505S |
Silicon P Channel MOS FET High Speed Power Switching
Silicon P Channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开
Power switching MOSFET
|
Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
|
| 2SK182607 2SK1826 |
N CHANNEL MOS TYPE (HIGH SPEED SWITCHING, ANALOG SWITCH APPLICATIONS)
|
Toshiba Semiconductor
|
| 2SC3811 |
Silicon NPN epitaxial planer type(For high speed switching)
Transistor
|
Matsshita / Panasonic
PANASONIC[Panasonic Semiconductor]
|
| H7N0307AB-E H7N0307AB05 H7N0307AB |
Silicon N Channel MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPP-E0 RJL60S5DPP-E0T2 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL60S5DPK-M0 |
600V - 20A - SJ MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| RJL6018DPK RJL6018DPK-15 RJL6018DPK-00T0 RJL6018DP |
600V - 27A - MOS FET High Speed Power Switching
|
Renesas Electronics Corporation
|
| HSM226S06 HSM226S |
Silicon Schottky Barrier Diode for High Speed Switching
|
Renesas Electronics Corporation
|
| 1N914A |
75mA Axial Leaded High Speed Switching Diodes
|
SUNMATE electronic Co.,...
|
