| PART |
Description |
Maker |
| ISL9R8120S3S ISL9R8120P2 ISL9R8120S3ST ISL9R8120P2 |
8A, 1200V STEALTH DIODE, TO220AC PACKAGE
8A, 1200V STEALTH DIODE, TO263/D2PAK PACKAGE
8A, 1200V StealthDiode 8 A, 1200 V, SILICON, RECTIFIER DIODE, TO-263AB
8A/ 1200V Stealth Diode
8A, 1200V Stealth⑩ Diode
8A, 1200V Stealth?/a> Diode
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| RURP4120CC |
4A, 1200V Ultrafast Dual Diode(4A, 1200V 超快双二极管)
|
INTERSIL[Intersil Corporation]
|
| RHRU100120 |
100A/ 1200V Hyperfast Diode
100A, 1200V Hyperfast Diode
|
INTERSIL[Intersil Corporation]
|
| PT10116 PT10112 |
DIODE MODULE 100A/1200V/1600V
|
NIEC[Nihon Inter Electronics Corporation]
|
| IRG4PH50UD IRG4PH50 |
1200V UltraFast 5-40 kHz Copack IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V, Vce(on)typ.=2.78V, @Vge=15V, Ic=24A)
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE(Vces=1200V Vce(on)typ.=2.78V @Vge=15V Ic=24A)
|
IRF[International Rectifier]
|
| HFB08PB120 HFA08PB120 |
1200V 8A HEXFRED Discrete Diode in a TO-247 (2 LEAD) package
Ultrafast, Soft Recovery Diode
Ultrafast/ Soft Recovery Diode
|
IRF[International Rectifier]
|
| RURP8120 |
8A, 1200V Ultrafast Diode
|
Fairchild Semiconductor
|
| HFA80FA120 |
1200V 80A HEXFRED Discrete Diode in a SOT-227 package
Ultrafast, Soft Recovery Diode
From old datasheet system
|
IRF[International Rectifier]
|
| HFA45HC120C |
1200V 28A Hi-Rel Ultra-Fast Common Cathode Diode in a TO-258AA package
HEXFREDTM Ultrafast, Soft Recovery Diode
|
International Rectifier
|
| X4005S8-2.7 X4005S8-2.7A X4005S8-4.5A X4005S8I X40 |
RTC Module With CPU Supervisor 1-CHANNEL POWER SUPPLY MANAGEMENT CKT, PDSO8
DIODE, STUD 95A 1200VDIODE, STUD 95A 1200V; Voltage, Vrrm:1200V; Current, If av:95A; Current, Ifs max:1150A; Voltage, forward at If:1.5V; Case style:E12; Thread size:M8; Diode type:Standard recovery; Polarity, diode:Stud Catho
THYRISTOR, CAPSULE 600ATHYRISTOR, CAPSULE 600A; Voltage, Vrrm:1200V; Current, It av:600A; Case style:TO-200; Current, It rms:1400A; Current, Itsm:11500A; Voltage, Vgt:2.0V; Current, Igt:200mA; Diameter, External:57.3mm; Length /
Thyristor Module; Current, It av:150A; Repetitive Reverse Voltage Max, Vrrm:1600V; Peak Surge Current:1250A; di/dt:100A/ s; Package/Case:G62
Thyristor Diode Module; Repetitive Reverse Voltage Max, Vrrm:1200V; Current Rating:220A
|
Intersil, Corp.
INTERSIL[Intersil Corporation]
|
