PART |
Description |
Maker |
APT1001RBLC APT1001RSLC APT1001 |
POWER MOS VI 1000V 11A 1.000 Ohm Power MOS VI is a new generation of low gate charge, high voltage N-Channel enhancement mode power MOSFETs Contact Gender:Pin; Circular Shell Style:Wall Mount Receptacle; Insert Arrangement:25-4 RoHS Compliant: No Power MOS VI is a new generation of low gate charge/ high voltage N-Channel enhancement mode power MOSFETs N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
|
ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
|
APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT100 |
Power MOS 7 is a new generation of low loss, high voltage, N-Channel Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN
|
Microsemi Corporation ADPOW[Advanced Power Technology] Microsemi, Corp.
|
APT8030B2VFR_05 APT8030B2VFR APT8030B2VFR05 APT803 |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 27 A, 800 V, 0.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
Advanced Power Technolo... ADPOW[Advanced Power Technology] MICROSEMI POWER PRODUCTS GROUP
|
APT10026L2FLL_03 APT10026L2FLL APT10026L2FLL03 |
38 A, 1000 V, 0.26 ohm, N-CHANNEL, Si, POWER, MOSFET TO-264MAX, 3 PIN Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
|
Microsemi, Corp. ADPOW[Advanced Power Technology]
|
APT10045B2FLL APT10045LFLL |
MGrid IDT Rec W/SglLRmp .76AuLF 10Ckt Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. POWER MOS 7 1000V 23A 0.450 Ohm
|
Advanced Power Technology Ltd.
|
SML60B16 SML60B25 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 25 A, 600 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
|
TT electronics Semelab, Ltd. SEME-LAB[Seme LAB]
|
SML60T38 |
N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 38 A, 600 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
|
TT electronics Semelab, Ltd.
|
APT50M50L2FLL |
POWER MOS 7 500V 89A 0.050 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. 电源MOS 7TM是一个低损耗,高电压,N沟道增强型功率MOSFET的新一代 Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology, Ltd.
|
APT50M75JLLU2 |
POWER MOS 7 500V 51A 0.075 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT10035JLL |
POWER MOS 7 1000V 25A 0.350 Ohm Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS.
|
Advanced Power Technology Ltd.
|
APT8011JFLL |
Power MOS 7TM is a new generation of low loss/ high voltage/ N-Channel enhancement mode power MOSFETS. Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. POWER MOS 7 800V 51A 0.110 Ohm
|
Advanced Power Technology Ltd.
|