| PART |
Description |
Maker |
| S1151010 S11510-1106 S11510-1006 |
Enhanced near infrared sensitivity: QE=40% (位=1000 nm)
Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)
|
Hamamatsu Corporation
|
| ISL29147 |
Low Power Ambient Light and Proximity Sensor with Enhanced Infrared Rejection
|
Intersil Corporation
|
| QED123 QED122 QED121 QED122A3R0 |
PLASTIC INFRARED LIGHT EMITTING DIODE 4.95 mm, 1 ELEMENT, INFRARED LED, 890 nm
|
FAIRCHILD[Fairchild Semiconductor]
Fairchild Semiconductor, Corp.
|
| NTE30001 |
2.5 mm, 1 ELEMENT, INFRARED LED, 950 nm
Infrared Emitting Diode Bi.Directional
|
NTE Electronics, Inc.
NTE[NTE Electronics]
|
| QEC113 QEC112 |
GAAS INFRARED EMITTING DIODE 2.9 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
QT[QT Optoelectronics]
|
| SIR-563ST3F07 |
Infrared light emitting diode, top view type
5 mm, 1 ELEMENT, INFRARED LED, 940 nm
|
Rohm
|
| TLN233 |
TOSHIBA Infrared LED GaALAs Infrared Emitter
|
TOREX SEMICONDUCTOR LTD.
Toshiba Semiconductor
|
| TLN105B |
TOSHIBA INFRARED LED GAAS INFRARED EMITTER
|
TOSHIBA[Toshiba Semiconductor]
|
| TLN20107 TLN201F TLN201 |
Infrared LED GaA?As Infrared Emitter
Infrared LED GaA??s Infrared Emitter
Infrared LED GaAГAs Infrared Emitter
|
Toshiba Semiconductor
|
| MC68160A MC68160AFB |
MC68160A Enhanced Ethernet Transceiver
ENHANCED ETHERNET INTERFACE TRANSCEIVER
MC68160A Enhanced Ethernet Transceiver
From old datasheet system
|
MOTOROLA[Motorola, Inc]
|
